TY - JOUR
T1 - Enhancement of the spin-orbit torque efficiency in W/Cu/CoFeB heterostructures via interface engineering
AU - Yang, Pei
AU - Shao, Qiming
AU - Yu, Guoqiang
AU - He, Congli
AU - Wong, Kin
AU - Lu, Xianyang
AU - Zhang, Junran
AU - Liu, Bo
AU - Meng, Hao
AU - He, Liang
AU - Wang, Kang L.
AU - Xu, Yongbing
N1 - Funding Information:
This work was supported by the funding of the National Key Research and Development Program of China (No. 2016YFA0300803), the National Natural Science Foundation of China (Nos. 61427812, 11774160, 61674079, and 61904079), the Natural Science Foundation of Jiangsu Province of China (Nos. BK20192006 and BK20190301), the Jiangsu Shuangchuang Program, and the Fundamental Research Funds for the Central Universities (Grant No. 021014380113). The authors at UCLA acknowledge funding support from the Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), under Award No. DE-SC0012670.
Publisher Copyright:
© 2020 Author(s).
PY - 2020/8/24
Y1 - 2020/8/24
N2 - Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (t Cu) have been systemically studied. The effective spin mixing conductance g eff, the interfacial spin transparency T, and the real spin-orbit torque efficiency (J s J c) real show a significant increase compared to the W/CoFeB heterostructure. (J s J c) real reaches its maximum of ∼0.54, increased up to ∼50% at the optimized t Cu ∼0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, θ SH int ∼0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.
AB - Here, the spin-torque ferromagnetic resonance signal and the spin Hall magnetoresistance induced by the spin Hall effect of W/Cu/CoFeB heterostructures with different Cu layer thicknesses (t Cu) have been systemically studied. The effective spin mixing conductance g eff, the interfacial spin transparency T, and the real spin-orbit torque efficiency (J s J c) real show a significant increase compared to the W/CoFeB heterostructure. (J s J c) real reaches its maximum of ∼0.54, increased up to ∼50% at the optimized t Cu ∼0.52 nm according to our theoretical prediction. More importantly, the intrinsic spin Hall angle of W, θ SH int ∼0.79 ± 0.20, has also been obtained after the correction of the inverse spin Hall effect and T. This suggests that the Cu insertion improves the interface quality and, therefore, assists the spin transport in the heterostructures, which potentially improves the performance of next-generation spintronic devices.
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U2 - 10.1063/5.0015557
DO - 10.1063/5.0015557
M3 - Article
AN - SCOPUS:85094325474
SN - 0003-6951
VL - 117
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 8
M1 - 082409
ER -