Enhancing circuit design flexibility with argon implanted polysilicon resistor

C. S. Lin, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. C. Hsieh, Y. L. Hsu, S. L. Hsu

Research output: Contribution to journalArticle

Abstract

An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

Original languageEnglish
Pages (from-to)1409-1411
Number of pages3
JournalElectronics Letters
Volume39
Issue number19
DOIs
Publication statusPublished - 2003 Sep 18
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Lin, C. S., Fang, Y. K., Chen, S. F., Lin, Y-C., Hsieh, M. C., Hsu, Y. L., & Hsu, S. L. (2003). Enhancing circuit design flexibility with argon implanted polysilicon resistor. Electronics Letters, 39(19), 1409-1411. https://doi.org/10.1049/el:20030883