Enhancing circuit design flexibility with argon implanted polysilicon resistor

C. S. Lin; Y. K. Fang; S. F. Chen; Yu-Cheng Lin; M. C. Hsieh; Y. L. Hsu; S. L. Hsu

doi:10.1049/el:20030883

Enhancing circuit design flexibility with argon implanted polysilicon resistor

C. S. Lin, Y. K. Fang, S. F. Chen, Yu-Cheng Lin, M. C. Hsieh, Y. L. Hsu, S. L. Hsu

Research output: Contribution to journal › Article › peer-review

Abstract

An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

Original language	English
Pages (from-to)	1409-1411
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	19
DOIs	https://doi.org/10.1049/el:20030883
Publication status	Published - 2003 Sept 18
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:20030883

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author = "Lin, {C. S.} and Fang, {Y. K.} and Chen, {S. F.} and Yu-Cheng Lin and Hsieh, {M. C.} and Hsu, {Y. L.} and Hsu, {S. L.}",

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AU - Lin, C. S.

AU - Fang, Y. K.

AU - Chen, S. F.

AU - Lin, Yu-Cheng

AU - Hsieh, M. C.

AU - Hsu, Y. L.

AU - Hsu, S. L.

PY - 2003/9/18

Y1 - 2003/9/18

N2 - An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

AB - An argon implanted polysilicon thin-film resistor is proposed to raise the sheet resistance and preserve the original electrical characteristics of a resistor for high voltage CMOS technology applications. The experiment results indicate the resistance can be raised by almost two times in magnitude while the voltage coefficient of resistance (VCR) and temperature coefficient of resistance (TCR) are shifted by only 7% and 11% at maximum, respectively. The technology offers potential applications for enhancing flexible circuit design in high voltage CMOS technology.

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Enhancing circuit design flexibility with argon implanted polysilicon resistor

Abstract

All Science Journal Classification (ASJC) codes

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