Enhancing crystallization of silicon nanocrystal embedded in silicon-rich oxide by ion beam-assisted sputtering

Sheng Wen Fu, Hui Ju Chen, Hsuan Ta Wu, Chuan Feng Shih

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This study examined the material and optical properties of Si nanocrystals (NCs) embedded in Si-rich oxide (SRO) films prepared through ion beam-assisted sputtering (IBAS). Transmission electron microscopy and grazing-incidence X-ray diffraction revealed that IBAS improved the formation of the Si NCs in the SRO films. The size and density of Si NCs were predominantly controlled by IBAS with varying anode voltage. The photoluminescence levels of the SRO films were enhanced, which was associated with the quantum confinement effect of the Si NCs. The benefits of an Ar ion beam used on the SRO films are discussed in this paper. The results indicate that IBAS is a promising approach for the development of highly efficient Si-based optoelectronic devices.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalMaterials Science in Semiconductor Processing
Volume56
DOIs
Publication statusPublished - 2016 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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