Enhancing Driving Performance of a-Si:H Thin-Film Transistors with Capacitive Coupling Method for Display Applications

Chih Lung Lin, Fu Hsing Chen, Jui Hung Chang, Yu Sheng Lin

Research output: Contribution to journalArticle

Abstract

A new capacitive coupling method to enhance the driving performance of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) in high-resolution applications is presented. The gate voltage can be enlarged by the entirely transmitted high voltage of a global direct current power source line (VDD). Established models that are based on the measured electrical characteristics of fabricated a-Si:H TFTs with different aspect ratios are used to evaluate the feasibility of this proposed method in the gate driver. The maximum voltage of the gate voltage can be increased from 37.3 V to 47.6 V when VDD is set to 20 V, improving the driving capability of the gate driver by more than 17%, based on the specifications of a 5.99 inch HD + (720 × 1440) panel at a frame rate of 120 Hz.

Original languageEnglish
Article number8412490
Pages (from-to)849-855
Number of pages7
JournalIEEE Journal of the Electron Devices Society
Volume6
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Thin film transistors
Display devices
Electric Power Supplies
Electric potential
Silicon
Amorphous silicon
Aspect ratio
Specifications

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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title = "Enhancing Driving Performance of a-Si:H Thin-Film Transistors with Capacitive Coupling Method for Display Applications",
abstract = "A new capacitive coupling method to enhance the driving performance of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) in high-resolution applications is presented. The gate voltage can be enlarged by the entirely transmitted high voltage of a global direct current power source line (VDD). Established models that are based on the measured electrical characteristics of fabricated a-Si:H TFTs with different aspect ratios are used to evaluate the feasibility of this proposed method in the gate driver. The maximum voltage of the gate voltage can be increased from 37.3 V to 47.6 V when VDD is set to 20 V, improving the driving capability of the gate driver by more than 17{\%}, based on the specifications of a 5.99 inch HD + (720 × 1440) panel at a frame rate of 120 Hz.",
author = "Lin, {Chih Lung} and Chen, {Fu Hsing} and Chang, {Jui Hung} and Lin, {Yu Sheng}",
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language = "English",
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Enhancing Driving Performance of a-Si:H Thin-Film Transistors with Capacitive Coupling Method for Display Applications. / Lin, Chih Lung; Chen, Fu Hsing; Chang, Jui Hung; Lin, Yu Sheng.

In: IEEE Journal of the Electron Devices Society, Vol. 6, 8412490, 01.01.2018, p. 849-855.

Research output: Contribution to journalArticle

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