Enhancing formation rate of highly-oriented silicon nanowire arrays with the assistance of back substrates

Chia Yun Chen, Ta Cheng Wei, Cheng Ting Lin, Jheng Yi Li

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Facile, effective and reliable etching technique for the formation of uniform silicon (Si) nanowire arrays were realized through the incorporation of back substrates with metal-assisted chemical etching (MaCE). In comparison with conventional MaCE process, a dramatic increase of etching rates upon MaCE process could be found by employing the conductive back substrates on p-type Si, while additionally prevented the creation of nanopores from catalytic etching reaction. Examinations on the involving etching kinetics, morphologies, wetting behaviors and surface structures were performed that validated the role of back substrates upon MaCE process. It was found that the involved two pathways for the extraction of electrons within Si favored the localized oxidation of Si at Si/Ag interfaces, thereby increasing the etching rate of MaCE process. This back-substrate involved MaCE could potentially meet the practical needs for the high-yield formation of Si nanowire arrays.

Original languageEnglish
Article number3164
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

All Science Journal Classification (ASJC) codes

  • General

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