Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Y. S. Lin; D. H. Huang; W. C. Hsu; K. H. Su; T. B. Wang

doi:10.1088/0268-1242/21/3/017

Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Y. S. Lin, D. H. Huang, W. C. Hsu, K. H. Su, T. B. Wang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.

Original language	English
Pages (from-to)	303-305
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	21
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/21/3/017
Publication status	Published - 2006 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/21/3/017

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title = "Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning",

abstract = "This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.",

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AU - Lin, Y. S.

AU - Huang, D. H.

AU - Hsu, W. C.

AU - Su, K. H.

AU - Wang, T. B.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.

AB - This paper reports InP/InGaAs double heterojunction bipolar transistors (DHBTs) made with composite-collector designs. The current gains of the DHBTs without and with emitter edge-thinning designs are 125 and 180, respectively. The composition of the collector and the base currents is analysed from the Gummel plots. Experimental data demonstrate that emitter edge thinning can further reduce the surface recombination current of the InP/InGaAs DHBTs and thus dramatically improve current gain, even though the surface recombination in InP/InGaAs DHBTs is much less than in GaAs-based DHBTs.

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Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

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