Abstract
This study first demonstrated the feasibility of using the photoalignment method to adequately control the structural anisotropy of pentacene films, which are active semiconducting layers, in thin-film transistors (TFTs) with conspicuous anisotropic electrical characteristics. The photoaligned pentacene films were characterized with respect to structure and morphology using x-ray diffraction, atomic force microscopy and Raman scattering. Compared to the uncontrolled pentacene films, a maximum 25-times increase in field-effect mobility (up to 0.82 cm2/Vs) is achieved in the photoaligned pentacene-based TFTs by aligning pentacene orientation parallel to the current flow direction using a photoaligned polyimide layer. Mobility anisotropic ratios ranging between 2.7 -8.3 for the current flow parallel and perpendicular to the alignment of the photoaligned pentacene films have been observed for photoaligned pentacene-based TFTs.
Original language | English |
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Article number | 27 |
Pages (from-to) | 97-108 |
Number of pages | 12 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 5522 |
DOIs | |
Publication status | Published - 2004 |
Event | Organic Field-Effect Transistors III - Denver, CO, United States Duration: 2004 Aug 3 → 2004 Aug 5 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering