Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector with Vanadium Electrode

Tsung Han Yeh, Po Hsun Chen, Chih Yang Lin, Yi Ting Tseng, Wen Chung Chen, Chun Chu Lin, Ting Chang Chang, Ching Ting Lee, Hsin Ying Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

In this study, vanadium (V) was used as a top electrode in a vanadium oxide (VOx)-based selector device. Electroforming was performed to form a threshold region with metal-insulator transition (MIT) at both V electrode and VOx switching layers without annealing during fabrication. The simple V/VOx/TiN structure obtained was scalable and compatible with complementary metal-oxide-semiconductors. All electrical measurement results indicated that V/VOx/TiN selectors exhibited excellent characteristics such as high uniformity, a short switching time of 60 ns, a robust endurance of >109 cycles, and high reliability and stability. Both the simulation analysis and current fitting method were applied to further validate experimental results. Consequently, we developed a nanoscale V/VOx/TiN selector with excellent characteristics, which can be potentially applied to future highdensity crossbar memory devices to overcome sneak-path problems.

Original languageEnglish
Article number9186824
Pages (from-to)5059-5062
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume67
Issue number11
DOIs
Publication statusPublished - 2020 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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