Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Minh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Ching Ting Lee; Edward Yi Chang

doi:10.7567/APEX.11.051202

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Minh Thien Huu Ha, Sa Hoang Huynh, Huy Binh Do, Tuan Anh Nguyen, Quang Ho Luc, Ching Ting Lee, Edward Yi Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al₂O₃/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al₂O₃/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

Original language	English
Article number	051202
Journal	Applied Physics Express
Volume	11
Issue number	5
DOIs	https://doi.org/10.7567/APEX.11.051202
Publication status	Published - 2018 May

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/APEX.11.051202

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@article{472e74615d5940c9a68ece1bfd5e531e,

title = "Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition",

abstract = "A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.",

author = "{Huu Ha}, {Minh Thien} and Huynh, {Sa Hoang} and Do, {Huy Binh} and Nguyen, {Tuan Anh} and Luc, {Quang Ho} and Lee, {Ching Ting} and Chang, {Edward Yi}",

note = "Funding Information: Acknowledgment This work was sponsored by the Ministry of Science and Technology, Taiwan, 3DNet Technologies, and Applications for Smart Campus Project, under Grant No. MOST 106-2622-8-009-017. Publisher Copyright: {\textcopyright} 2018 The Japan Society of Applied Physics.",

year = "2018",

month = may,

doi = "10.7567/APEX.11.051202",

language = "English",

volume = "11",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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T1 - Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

AU - Huu Ha, Minh Thien

AU - Huynh, Sa Hoang

AU - Do, Huy Binh

AU - Nguyen, Tuan Anh

AU - Luc, Quang Ho

AU - Lee, Ching Ting

AU - Chang, Edward Yi

N1 - Funding Information: Acknowledgment This work was sponsored by the Ministry of Science and Technology, Taiwan, 3DNet Technologies, and Applications for Smart Campus Project, under Grant No. MOST 106-2622-8-009-017. Publisher Copyright: © 2018 The Japan Society of Applied Physics.

PY - 2018/5

Y1 - 2018/5

N2 - A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

AB - A GaSb epilayer is grown on a GaAs/Si(001) epitaxial substrate via metalorganic chemical vapor deposition. High-resolution transmission electron microscopy micrographs and high-resolution X-ray reciprocal space mapping indicate an entirely relaxed interfacial misfit (IMF) array GaSb epilayer. The valence-band offset and conduction-band offset of the Al2O3/GaSb/GaAs/Si structure are estimated to be 2.39 and 3.65 eV, respectively. The fabricated Al2O3/p-GaSb/GaAs/Si MOS capacitors exhibited good capacitance–voltage characteristics with a small accumulation frequency dispersion of approximately 1.05% per decade. These results imply that the GaSb epilayer grown on the GaAs/Si platform in the IMF mode can be used for future complementary metal–oxide semiconductor applications.

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Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

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