Epitaxial behavior and interface structures of BSTO thin films

C. L. Chen; Z. Zhang; H. Feng; G. P. Luo; S. Y. Chen; A. Heilman; W. K. Chu; C. W. Chu; J. Gao; B. Rafferty; S. J. Pennycook; Y. Liou; F. A. Miranda; F. Van Keuls

doi:10.1080/10584580008222235

Epitaxial behavior and interface structures of BSTO thin films

C. L. Chen, Z. Zhang, H. Feng, G. P. Luo, S. Y. Chen, A. Heilman, W. K. Chu, C. W. Chu, J. Gao, B. Rafferty, S. J. Pennycook, Y. Liou, F. A. Miranda, F. Van Keuls

Executive Vice President

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Ferroelectric Ba_(1-x)Sr_xTiO₃ (x = 0.5 and 0.25) thin films were grown on (001) LaAlO₃ by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉_BSTO // lang;100〉_LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χ_min of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

Original language	English
Pages (from-to)	237-246
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	28
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580008222235
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Ceramics and Composites
Materials Chemistry
Electrical and Electronic Engineering
Control and Systems Engineering

Access to Document

10.1080/10584580008222235

Cite this

@article{73ce99a5998b4bb5bc1ec38f27f702d2,

title = "Epitaxial behavior and interface structures of BSTO thin films",

abstract = "Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.",

author = "Chen, {C. L.} and Z. Zhang and H. Feng and Luo, {G. P.} and Chen, {S. Y.} and A. Heilman and Chu, {W. K.} and Chu, {C. W.} and J. Gao and B. Rafferty and Pennycook, {S. J.} and Y. Liou and Miranda, {F. A.} and {Van Keuls}, F.",

note = "Funding Information: This work is supported in part by the T. L. L. Temple Foundation, the John J. and R e b aMoores Endowment, and the State of Texas through the Texas Center for Superconductivity at University of Houston. It was also supported in part by the MRSEC program of the National Science Foundation under Award Number DMR-9632667. This research at Oak Ridge National Laboratory was partially sponsored by the Division of Materials Sciences, U.S. Department of Energy, under Contract No. DE-AC05-960R22464w ith Lockheed Martin Energy Research Corporation, and by appointment to the ORNL Postdoctoral Research Program administrated jointly by ORISE and",

year = "2000",

doi = "10.1080/10584580008222235",

language = "English",

volume = "28",

pages = "237--246",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Epitaxial behavior and interface structures of BSTO thin films

AU - Chen, C. L.

AU - Zhang, Z.

AU - Feng, H.

AU - Luo, G. P.

AU - Chen, S. Y.

AU - Heilman, A.

AU - Chu, W. K.

AU - Chu, C. W.

AU - Gao, J.

AU - Rafferty, B.

AU - Pennycook, S. J.

AU - Liou, Y.

AU - Miranda, F. A.

AU - Van Keuls, F.

N1 - Funding Information: This work is supported in part by the T. L. L. Temple Foundation, the John J. and R e b aMoores Endowment, and the State of Texas through the Texas Center for Superconductivity at University of Houston. It was also supported in part by the MRSEC program of the National Science Foundation under Award Number DMR-9632667. This research at Oak Ridge National Laboratory was partially sponsored by the Division of Materials Sciences, U.S. Department of Energy, under Contract No. DE-AC05-960R22464w ith Lockheed Martin Energy Research Corporation, and by appointment to the ORNL Postdoctoral Research Program administrated jointly by ORISE and

PY - 2000

Y1 - 2000

N2 - Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

AB - Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

UR - http://www.scopus.com/inward/record.url?scp=6744259026&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6744259026&partnerID=8YFLogxK

U2 - 10.1080/10584580008222235

DO - 10.1080/10584580008222235

M3 - Article

AN - SCOPUS:6744259026

SN - 1058-4587

VL - 28

SP - 237

EP - 246

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Epitaxial behavior and interface structures of BSTO thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this