Epitaxial behavior and interface structures of BSTO thin films

C. L. Chen, Z. Zhang, H. Feng, G. P. Luo, S. Y. Chen, A. Heilman, W. K. Chu, C. W. Chu, J. Gao, B. Rafferty, S. J. Pennycook, Y. Liou, F. A. Miranda, F. Van Keuls

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Ferroelectric Ba(1-x)SrxTiO3 (x = 0.5 and 0.25) thin films were grown on (001) LaAlO3 by using pulsed laser ablation. Extensive x-ray diffraction and selected area electron diffraction reveal that the as-grown films were (001) oriented with a good in-plane relationship of 〈100〉BSTO // lang;100〉LAO- Rutherford Backscattering Spectroscopy ion-channeling studies suggested that the films had excellent epitaxial quality and crystallinity with an ion beam minimum yield χmin of only 2.6%. Atomically sharp interfaces were seen by cross-sectional high-resolution electron microscopy, indicated that the density of misfit dislocations was consistent with the lattice mismatch from the theoretical calculation.

Original languageEnglish
Pages (from-to)237-246
Number of pages10
JournalIntegrated Ferroelectrics
Issue number1-4
Publication statusPublished - 2000

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Ceramics and Composites
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Control and Systems Engineering


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