Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

C. L. Chen; H. H. Feng; Z. Zhang; A. Brazdeikis; Z. J. Huang; W. K. Chu; C. W. Chu; F. A. Miranda; F. W. Van Keuls; R. R. Romanofsky; Y. Liou

doi:10.1063/1.124392

Epitaxial ferroelectric Ba_0.5Sr_0.5TiO₃ thin films for room-temperature tunable element applications

C. L. Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, Y. Liou

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Abstract

Perovskite ferroelectric Ba_0.5Sr_0.5TiO₃ grown epitaxially on (001) LaAlO₃ substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]_BSTO∥[100]_LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.

Original language	English
Pages (from-to)	412-414
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	3
DOIs	https://doi.org/10.1063/1.124392
Publication status	Published - 1999 Jul 19

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124392

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title = "Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications",

abstract = "Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]BSTO∥[100]LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.",

author = "Chen, {C. L.} and Feng, {H. H.} and Z. Zhang and A. Brazdeikis and Huang, {Z. J.} and Chu, {W. K.} and Chu, {C. W.} and Miranda, {F. A.} and {Van Keuls}, {F. W.} and Romanofsky, {R. R.} and Y. Liou",

year = "1999",

month = jul,

day = "19",

doi = "10.1063/1.124392",

language = "English",

volume = "75",

pages = "412--414",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

AU - Chen, C. L.

AU - Feng, H. H.

AU - Zhang, Z.

AU - Brazdeikis, A.

AU - Huang, Z. J.

AU - Chu, W. K.

AU - Chu, C. W.

AU - Miranda, F. A.

AU - Van Keuls, F. W.

AU - Romanofsky, R. R.

AU - Liou, Y.

PY - 1999/7/19

Y1 - 1999/7/19

N2 - Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]BSTO∥[100]LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.

AB - Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]BSTO∥[100]LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.

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JF - Applied Physics Letters

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Epitaxial ferroelectric Ba_0.5Sr_0.5TiO₃ thin films for room-temperature tunable element applications

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