Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications

C. L. Chen, H. H. Feng, Z. Zhang, A. Brazdeikis, Z. J. Huang, W. K. Chu, C. W. Chu, F. A. Miranda, F. W. Van Keuls, R. R. Romanofsky, Y. Liou

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174 Citations (Scopus)

Abstract

Perovskite ferroelectric Ba0.5Sr0.5TiO3 grown epitaxially on (001) LaAlO3 substrates by pulsed laser ablation were investigated by X-ray diffraction, rocking curve and pole figure measurements. The films were found to exhibit an (100) orientation normal to the substrate surface with an in-plane relationship of [100]BSTO∥[100]LAO. As evidenced from relatively small full width at half maximum values, a small ion beam minimum yield of 2.6, a small loss tangent, and relatively large dielectric constant, the films were of excellent quality. The room temperature dielectric constant can be changed by as much as 33% by changing the bias from 0-35 V at 1 MHz, opening the possibility for developing room-temperature tunable microwave elements using such films.

Original languageEnglish
Pages (from-to)412-414
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number3
DOIs
Publication statusPublished - 1999 Jul 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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