Epitaxial growth and structure characterization of single-crystal Co(11{circle, and vertical bar}20) films on Cr(100) surfaces

Jung-Chun Huang, Y. Liou, H. L. Liu, Y. J. Wu

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

Single-crystal Co films have been grown on two kinds of Cr(100) terminated surfaces on MgO(100) substrates by molecular beam epitaxy. The first was the growth of Co films on top of rough Cr(100) surfaces on MgO(100) substrate. hcp Co(11{circle, and vertical bar}20) films were prepared on such Cr(100) surfaces with about the same order of surface roughness as that of the Cr buffer layers. The second was the growth of high-quality and smooth Co(11{circle, and vertical bar}20) films on flat Cr(100) surfaces on CrxMo1-x(100) graded buffer layers. We find that the use of CrxMo1-x(100) graded buffer layers is critical to quickly prepare smooth and well-ordered Cr(100) surfaces. It is suggested that the symmetry breaking from four-fold Cr(100) to two-fold Co(11{circle, and vertical bar}20) may be due to the existence of surface steps under proper growth kinetics. The surface structure and crystal orientation of these films were characterized by reflection high-energy electron diffraction, atomic force microscopy and X-ray diffraction.

Original languageEnglish
Pages (from-to)363-371
Number of pages9
JournalJournal of Crystal Growth
Volume139
Issue number3-4
DOIs
Publication statusPublished - 1994 May 2

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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