Epitaxial growth and the art of computer simulations

Horia Metiu, Yan Ten Lu, Zhenyu Zhang

Research output: Contribution to journalArticlepeer-review

105 Citations (Scopus)

Abstract

The results of kinetic simulations of the aggregates formed during the deposition of atoms on a semiconductor surface are reviewed. Because the kinetic parameters are poorly known and the accuracy of the existing interatomic potentials has not been sufficiently tested, the goal has been to reach a qualitative understanding of the formation of unusual patterns during growth, such as the segregation of aluminum during the growth of aluminum-gallium- arsenide (AlGaAs) coherent tilted superlattices and the formation of thin, long, and parallel islands during the deposition of Si on an Si(100) surface. Kinetic mechanisms for these phenomena are proposed.

Original languageEnglish
Pages (from-to)1088-1092
Number of pages5
JournalScience
Volume255
Issue number5048
DOIs
Publication statusPublished - 1992 Jan 1

All Science Journal Classification (ASJC) codes

  • General

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