Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

Liang He, Faxian Xiu, Yong Wang, Alexei V. Fedorov, Guan Huang, Xufeng Kou, Murong Lang, Ward P. Beyermann, Jin Zou, Kang L. Wang

Research output: Contribution to journalArticlepeer-review

112 Citations (Scopus)


In this paper, we report the epitaxial growth of Bi2Se 3 thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of ∼100K, the surface states of a 7 nm thick film contribute up to 50 of the total conduction.

Original languageEnglish
Article number103702
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2011 May 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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