Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

C. L. Chen; J. Shen; S. Y. Chen; G. P. Luo; C. W. Chu; F. A. Miranda; F. W. Van Keuls; J. C. Jiang; E. I. Meletis; H. Y. Chang

doi:10.1063/1.1343499

Epitaxial growth of dielectric Ba_0.6Sr_0.4TiO₃ thin film on MgO for room temperature microwave phase shifters

C. L. Chen, J. Shen, S. Y. Chen, G. P. Luo, C. W. Chu, F. A. Miranda, F. W. Van Keuls, J. C. Jiang, E. I. Meletis, H. Y. Chang

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Abstract

Dielectric Ba_0.6Sr_0.4TiO₃ thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba_0.6Sr_0.4TiO₃ thin films on (001) MgO is close to that needed for practical applications in wireless communications.

Original language	English
Pages (from-to)	652-654
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	5
DOIs	https://doi.org/10.1063/1.1343499
Publication status	Published - 2001 Jan 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1343499

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title = "Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters",

abstract = "Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.",

author = "Chen, {C. L.} and J. Shen and Chen, {S. Y.} and Luo, {G. P.} and Chu, {C. W.} and Miranda, {F. A.} and {Van Keuls}, {F. W.} and Jiang, {J. C.} and Meletis, {E. I.} and Chang, {H. Y.}",

year = "2001",

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doi = "10.1063/1.1343499",

language = "English",

volume = "78",

pages = "652--654",

journal = "Applied Physics Letters",

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T1 - Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

AU - Chen, C. L.

AU - Shen, J.

AU - Chen, S. Y.

AU - Luo, G. P.

AU - Chu, C. W.

AU - Miranda, F. A.

AU - Van Keuls, F. W.

AU - Jiang, J. C.

AU - Meletis, E. I.

AU - Chang, H. Y.

PY - 2001/1/29

Y1 - 2001/1/29

N2 - Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.

AB - Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.

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JF - Applied Physics Letters

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Epitaxial growth of dielectric Ba_0.6Sr_0.4TiO₃ thin film on MgO for room temperature microwave phase shifters

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