Epitaxial growth of dielectric Ba0.6Sr0.4TiO3 thin film on MgO for room temperature microwave phase shifters

C. L. Chen, J. Shen, S. Y. Chen, G. P. Luo, C. W. Chu, F. A. Miranda, F. W. Van Keuls, J. C. Jiang, E. I. Meletis, H. Y. Chang

Research output: Contribution to journalArticlepeer-review

160 Citations (Scopus)

Abstract

Dielectric Ba0.6Sr0.4TiO3 thin films were epitaxially grown on (001) MgO by using pulsed laser ablation. Microstructure studies from x-ray diffraction and electron microscopy suggest that the as-grown films are c-axis oriented with an interface relationship of 〈100〉BSTO//〈100〉MgO. A room temperature coupled microwave phase shifter has been developed with a phase shift near 250° at 23.675 GHz under an electrical field of 40 V/μm and a figure of merit of ∼53°/dB. The performance of the microwave phase shifter based on the epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO is close to that needed for practical applications in wireless communications.

Original languageEnglish
Pages (from-to)652-654
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number5
DOIs
Publication statusPublished - 2001 Jan 29

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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