Epitaxial growth of ferroelectric Ba1-xSrxTiO3 thin films for room temperature tunable microwave devices

C. L. Chen, J. Shen, S. Y. Chen, Z. Zhang, G. P. Luo, W. K. Chu, C. W. Chu

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

This paper will review the recent progress of the Texas Center for Superconductivity concerning the epitaxial growth of ferroelectric Ba1-xSrxTiO3 thin films on various substrates using pulsed laser ablation. Microstructure studies from X-ray diffraction and electron microscopy suggest that the as-grown films on (001) LaAlO3 and (001) MgO are c-axis oriented with excellent single crystallinity. The Rutherford Back-Scattering Spectroscopic studies indicate that the films have excellent epitaxial behavior. Microwave property measurements showed that the room temperature dielectric constant could be tuned up to 33% at 2.33 V/μm applied electric field. The coupled microwave phase shifter has achieved a phase shift of over 200° at 23.675 GHz and a figure of merit of about 55°/dB at room temperature. These results demonstrate that the epitaxial Ba1-xSrxTiO3 thin films are close to becoming used in the practical applications for the wireless rf communications.

Original languageEnglish
Pages (from-to)181-189
Number of pages9
JournalFerroelectrics
Volume252
Issue number1-4
DOIs
Publication statusPublished - 2001
Event6th International Simposium on Ferroic Domains and Mesoscopic Structures (ISFD-6) - Nanjing, China
Duration: 2000 May 292000 Jun 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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