Epitaxial growth of GaAs by solid-phase transport

Jen-Sue Chen, E. Kolawa, C. M. Garland, M. A. Nicolet

Research output: Contribution to journalArticle

Abstract

(100) GaAs substrates with an Ag film about 45 nm thick were first annealed at 550°C for 30 min in an Ar-flowing furnace (preannealing). A 110-nm-thick GaAs layer was then deposited on top of the preannealed 〈GaAs〉/Ag samples, followed by an amorphous Ta-Si-N film that was deposited over the GaAs layer to serve as a cap layer to minimize the loss of As during the following annealing process. The completed structures were then annealed again at 550°C for 30 min in flowing Ar. The transport of Ga and As through the Ag layer and an epitaxial growth of GaAs on top of the (100) GaAs substrate are observed by cross-sectional transmission electron microscopy and MeV 4He backscattering spectrometry. No GaAs epitaxial growth is observed in samples that are not preannealed. Our results demonstrate that epigrowth through a solid transport medium is possible for a III-V semiconductor as it is for Si and Ge.

Original languageEnglish
Pages (from-to)1597-1599
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number13
DOIs
Publication statusPublished - 1991 Dec 1

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solid phases
caps
furnaces
backscattering
transmission electron microscopy
annealing
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, J-S., Kolawa, E., Garland, C. M., & Nicolet, M. A. (1991). Epitaxial growth of GaAs by solid-phase transport. Applied Physics Letters, 59(13), 1597-1599. https://doi.org/10.1063/1.106267
Chen, Jen-Sue ; Kolawa, E. ; Garland, C. M. ; Nicolet, M. A. / Epitaxial growth of GaAs by solid-phase transport. In: Applied Physics Letters. 1991 ; Vol. 59, No. 13. pp. 1597-1599.
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Chen, J-S, Kolawa, E, Garland, CM & Nicolet, MA 1991, 'Epitaxial growth of GaAs by solid-phase transport', Applied Physics Letters, vol. 59, no. 13, pp. 1597-1599. https://doi.org/10.1063/1.106267

Epitaxial growth of GaAs by solid-phase transport. / Chen, Jen-Sue; Kolawa, E.; Garland, C. M.; Nicolet, M. A.

In: Applied Physics Letters, Vol. 59, No. 13, 01.12.1991, p. 1597-1599.

Research output: Contribution to journalArticle

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