Epitaxial growth of high mobility Bi2 Se3 thin films on CdS

X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, K. L. Wang

Research output: Contribution to journalArticlepeer-review

77 Citations (Scopus)


We report the experiment of high quality epitaxial growth of Bi2 Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2 Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm2 /V s for the as-grown Bi2 Se3 thin films at temperatures below 30 K. These characteristics of Bi2 Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.

Original languageEnglish
Article number242102
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2011 Jun 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Epitaxial growth of high mobility Bi2 Se3 thin films on CdS'. Together they form a unique fingerprint.

Cite this