Epitaxial growth of high mobility Bi2 Se3 thin films on CdS

X. F. Kou; L. He; F. X. Xiu; M. R. Lang; Z. M. Liao; Y. Wang; A. V. Fedorov; X. X. Yu; J. S. Tang; G. Huang; X. W. Jiang; J. F. Zhu; J. Zou; K. L. Wang

doi:10.1063/1.3599540

Epitaxial growth of high mobility Bi₂ Se₃ thin films on CdS

X. F. Kou, L. He, F. X. Xiu, M. R. Lang, Z. M. Liao, Y. Wang, A. V. Fedorov, X. X. Yu, J. S. Tang, G. Huang, X. W. Jiang, J. F. Zhu, J. Zou, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

We report the experiment of high quality epitaxial growth of Bi₂ Se₃ thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi₂ Se₃ has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm² /V s for the as-grown Bi₂ Se₃ thin films at temperatures below 30 K. These characteristics of Bi₂ Se₃ thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.

Original language	English
Article number	242102
Journal	Applied Physics Letters
Volume	98
Issue number	24
DOIs	https://doi.org/10.1063/1.3599540
Publication status	Published - 2011 Jun 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3599540

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@article{63efd857a95049ffafc5f82bb6921829,

title = "Epitaxial growth of high mobility Bi2 Se3 thin films on CdS",

abstract = "We report the experiment of high quality epitaxial growth of Bi2 Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2 Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm2 /V s for the as-grown Bi2 Se3 thin films at temperatures below 30 K. These characteristics of Bi2 Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.",

author = "Kou, {X. F.} and L. He and Xiu, {F. X.} and Lang, {M. R.} and Liao, {Z. M.} and Y. Wang and Fedorov, {A. V.} and Yu, {X. X.} and Tang, {J. S.} and G. Huang and Jiang, {X. W.} and Zhu, {J. F.} and J. Zou and Wang, {K. L.}",

note = "Funding Information: This work is supported by the Focus Center Research Program-Center on Functional Engineered Nano Architectonics (FENA) and the Australian Research Council. X. F. Kou and L. He contribute equally to this paper. Y. Wang thanks the Queensland International Fellowship. ",

year = "2011",

month = jun,

day = "13",

doi = "10.1063/1.3599540",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Epitaxial growth of high mobility Bi2 Se3 thin films on CdS

AU - Kou, X. F.

AU - He, L.

AU - Xiu, F. X.

AU - Lang, M. R.

AU - Liao, Z. M.

AU - Wang, Y.

AU - Fedorov, A. V.

AU - Yu, X. X.

AU - Tang, J. S.

AU - Huang, G.

AU - Jiang, X. W.

AU - Zhu, J. F.

AU - Zou, J.

AU - Wang, K. L.

N1 - Funding Information: This work is supported by the Focus Center Research Program-Center on Functional Engineered Nano Architectonics (FENA) and the Australian Research Council. X. F. Kou and L. He contribute equally to this paper. Y. Wang thanks the Queensland International Fellowship.

PY - 2011/6/13

Y1 - 2011/6/13

N2 - We report the experiment of high quality epitaxial growth of Bi2 Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2 Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm2 /V s for the as-grown Bi2 Se3 thin films at temperatures below 30 K. These characteristics of Bi2 Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.

AB - We report the experiment of high quality epitaxial growth of Bi2 Se3 thin films on hexagonal CdS (0001) substrates using a solid source molecular-beam epitaxy system. Layer-by-layer growth of single crystal Bi2 Se3 has been observed from the first quintuple layer. The size of surface triangular terraces has exceeded 1 μm. Angle-resolved photoemission spectroscopy clearly reveals the presence of Dirac-cone-shape surface states. Magneto-transport measurements demonstrate a high Hall mobility of ∼6000 cm2 /V s for the as-grown Bi2 Se3 thin films at temperatures below 30 K. These characteristics of Bi2 Se3 thin films promise a variety of potential applications in ultrafast, low-power dissipation devices.

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M1 - 242102

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Epitaxial growth of high mobility Bi₂ Se₃ thin films on CdS

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