Epitaxial growth of inn films by molecular-beam epitaxy using hydrazoic acid (HN 3 ) as an efficient nitrogen source

J. T. Chen, C. L. Hsiao, Hsu-Cheng Hsu, C. T. Wu, C. L. Yen, P. C. Wei, L. C. Chen, K. H. Chen

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16 Citations (Scopus)


Epitaxial InN films have been successfully grown on c-plane GaN template by gas-source molecular-beam epitaxy with hydrazoic acid (HN 3 ) as an efficient nitrogen source. Results in residual-gas analyzer show that the HN 3 is highly dissociated to produce nitrogen radicals and can be controlled in the amounts of active nitrogen species by tuning HN 3 pressure. A flat and high-purity InN epifilm has been realized at the temperature near 550 °C, and a growth rate of 200 nm/hr is also achieved. Moreover, the epitaxial relationship of the InN(002) on the GaN(002) is reflected in the X-ray diffraction, and the full-width at half-maximum of the InN(002) peak as narrow as 0.05° is related to a high-quality crystallinity. An infrared photoluminescence (PL) emission peak at 0.705 eV and the integrated intensity increasing linearly with excitation power suggest that the observed PL can be attributed to a free-to-bound recombination.

Original languageEnglish
Pages (from-to)6755-6759
Number of pages5
JournalJournal of Physical Chemistry A
Issue number29
Publication statusPublished - 2007 Jul 26

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry

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