Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Wei Chi Lai; Chun Yen Chang; Meiso Yokoyama; Jen Dar Guo; Jian Shihn Tsang; Shih Hsiung Chan; Jong Shing Bow; Sun Chin Wei; Ray Hua Hong; Simon M. Sze

doi:10.1143/jjap.37.5465

Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Wei Chi Lai, Chun Yen Chang, Meiso Yokoyama, Jen Dar Guo, Jian Shihn Tsang, Shih Hsiung Chan, Jong Shing Bow, Sun Chin Wei, Ray Hua Hong, Simon M. Sze

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of tnmethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2°. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.

Original language	English
Pages (from-to)	5465-5469
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	10
DOIs	https://doi.org/10.1143/jjap.37.5465
Publication status	Published - 1998 Oct

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition",

abstract = "GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of tnmethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2°. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.",

author = "Lai, {Wei Chi} and Chang, {Chun Yen} and Meiso Yokoyama and Guo, {Jen Dar} and Tsang, {Jian Shihn} and Chan, {Shih Hsiung} and Bow, {Jong Shing} and Wei, {Sun Chin} and Hong, {Ray Hua} and Sze, {Simon M.}",

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T1 - Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

AU - Lai, Wei Chi

AU - Chang, Chun Yen

AU - Yokoyama, Meiso

AU - Guo, Jen Dar

AU - Tsang, Jian Shihn

AU - Chan, Shih Hsiung

AU - Bow, Jong Shing

AU - Wei, Sun Chin

AU - Hong, Ray Hua

AU - Sze, Simon M.

PY - 1998/10

Y1 - 1998/10

N2 - GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of tnmethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2°. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.

AB - GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of tnmethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2°. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.

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Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Abstract

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