Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Wei Chi Lai, Chun Yen Chang, Meiso Yokoyama, Jen Dar Guo, Jian Shihn Tsang, Shih Hsiung Chan, Jong Shing Bow, Sun Chin Wei, Ray Hua Hong, Simon M. Sze

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

GaN films were successfully grown by the remote-plasma metalorganic chemical vapor deposition (RPMOCVD) system. The composition of the GaN films could be tuned from nitrogen-rich to stoichiometric growth by varying the mole flow rate of tnmethylgallium (TMGa). A hypothesis concerning the collisions between excited nitrogen and TMGa was also brought up. The collision between excited nitrogen and TMGa influences the characteristics of surface morphology, composition, growth rate, and growth mechanism. The characteristics of the GaN film were optimized by changing the growth conditions. The narrowest FWHM of the double-crystal X-ray rocking curve is about 0.2°. Under optimized conditions, the composition of the GaN film is almost the same as that of the reference GaN film grown by MOCVD.

Original languageEnglish
Pages (from-to)5465-5469
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number10
DOIs
Publication statusPublished - 1998 Oct

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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