Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum

Chen-Kuei Chung, J. Hwang

Research output: Contribution to journalArticle

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Abstract

The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 Å was directly deposited on Si(100) at 475°C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475°C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 Å on Si(100) at room temperature and followed by annealing at 475°C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si 4/Si(100) interface.

Original languageEnglish
Pages (from-to)1937-1939
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number3
DOIs
Publication statusPublished - 1994 Dec 1

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iridium
ultrahigh vacuum
annealing
interfacial energy
temperature
room temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum",
abstract = "The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 {\AA} was directly deposited on Si(100) at 475°C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475°C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 {\AA} on Si(100) at room temperature and followed by annealing at 475°C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si 4/Si(100) interface.",
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Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum. / Chung, Chen-Kuei; Hwang, J.

In: Journal of Applied Physics, Vol. 76, No. 3, 01.12.1994, p. 1937-1939.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial iridium silicide formation during deposition of Ir on Si(100) at high temperature under ultrahigh vacuum

AU - Chung, Chen-Kuei

AU - Hwang, J.

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N2 - The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 Å was directly deposited on Si(100) at 475°C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475°C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 Å on Si(100) at room temperature and followed by annealing at 475°C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si 4/Si(100) interface.

AB - The iridium silicide formation has been examined by depositing Ir on Si(100) at different substrate temperatures under ultrahigh vacuum. An epitaxial Ir3Si4 film was formed when an Ir film of 100 Å was directly deposited on Si(100) at 475°C and annealed at the same temperature for 1.5 h. The Ir3Si4 was not observed in the conventional annealing process at 475°C. In contrast, a polycrystalline IrSi film was formed after deposition of an Ir film of 100 Å on Si(100) at room temperature and followed by annealing at 475°C for 1.5 h under ultrahigh vacuum. Formation of the epitaxial Ir3Si4 on Si(100) is attributed to the interfacial energy of the Ir3Si 4/Si(100) interface.

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