Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

F. Y. Huang; K. Sakamoto; K. L. Wang; P. Trinh; B. Jalali

doi:10.1109/68.553101

Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

F. Y. Huang, K. Sakamoto, K. L. Wang, P. Trinh, B. Jalali

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm². The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.

Original language	English
Pages (from-to)	229-231
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/68.553101
Publication status	Published - 1997 Feb

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.553101

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@article{21e7816008a245f29e4a1ce9266fbd27,

title = "Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range",

abstract = "A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 {\AA}. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm2. The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.",

author = "Huang, {F. Y.} and K. Sakamoto and Wang, {K. L.} and P. Trinh and B. Jalali",

note = "Funding Information: Manuscript received August 30, 1996; revised October 17, 1996. This work was supported in part by DARPA/ONR under Contract N0014-95-1-0675. The authors are with the Electrical Engineering Department, University of California, Los Angeles, Los Angeles, CA 90095-1594 USA. Publisher Item Identifier S 1041-1135(97)01204-4.",

year = "1997",

month = feb,

doi = "10.1109/68.553101",

language = "English",

volume = "9",

pages = "229--231",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

AU - Huang, F. Y.

AU - Sakamoto, K.

AU - Wang, K. L.

AU - Trinh, P.

AU - Jalali, B.

N1 - Funding Information: Manuscript received August 30, 1996; revised October 17, 1996. This work was supported in part by DARPA/ONR under Contract N0014-95-1-0675. The authors are with the Electrical Engineering Department, University of California, Los Angeles, Los Angeles, CA 90095-1594 USA. Publisher Item Identifier S 1041-1135(97)01204-4.

PY - 1997/2

Y1 - 1997/2

N2 - A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm2. The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.

AB - A Si-based waveguide photodetector with a response in the 1.3-1.55-μm wavelength range is demonstrated. The active absorption layer of the pin photodiode consists of a SiGeC alloy epitaxially grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. The external quantum efficiency for a 400-μm-long waveguide, measured by using a single-mode fiber coupled to the waveguide facet, is 0.2% at 1.55 μm. The dark current density at peak photoresponse is 40 pA/μm2. The quantum efficiency can be further enhanced by using multiple SiGeC layers as the absorber. Direct measurements of the absorption coefficient for the alloy layer are also reported.

UR - http://www.scopus.com/inward/record.url?scp=0031076526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031076526&partnerID=8YFLogxK

U2 - 10.1109/68.553101

DO - 10.1109/68.553101

M3 - Article

AN - SCOPUS:0031076526

SN - 1041-1135

VL - 9

SP - 229

EP - 231

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Epitaxial SiGeC waveguide photodetector grown on Si substrate with response in the 1.3-1.55-μm wavelength range

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