EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE

F. Y. Huang; Shawn G. Thomas; Michael Chu; Kang L. Wang; N. David Theodore

doi:10.1109/68.553101

EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE

F. Y. Huang, Shawn G. Thomas, Michael Chu, Kang L. Wang, N. David Theodore

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

We demonstrate a Si-based photodetector with a response in the 1.3-1.55 µm wavelengthrange. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-µm long waveguide is 0.2% at 1.55 µm, and 8% at 1.3 µm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 µm wavelength range.

Original language	English
Pages (from-to)	665-668
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/68.553101
Publication status	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 1996 Dec 8 → 1996 Dec 11

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/68.553101

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@article{39f7f676f18242e29c7aaee4e43c78d9,

title = "EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE",

abstract = "We demonstrate a Si-based photodetector with a response in the 1.3-1.55 µm wavelengthrange. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 {\AA}. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-µm long waveguide is 0.2% at 1.55 µm, and 8% at 1.3 µm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 µm wavelength range.",

author = "Huang, {F. Y.} and Thomas, {Shawn G.} and Michael Chu and Wang, {Kang L.} and {David Theodore}, N.",

note = "Funding Information: The authors would like to acknowledgeDr. Richard Westhoff of LSRL for the SiGeC alloy growth. This work was partially supported by ONR under Contract NO.N0014-95-1-0675. Funding Information: The authors would like to acknowledge Dr. Richard Westhoff of LSRL for the SiGeC alloy growth. This work was partially supported by ONR under Contract NO.N OO14-95-1-0675. Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/68.553101",

language = "English",

pages = "665--668",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE

AU - Huang, F. Y.

AU - Thomas, Shawn G.

AU - Chu, Michael

AU - Wang, Kang L.

AU - David Theodore, N.

N1 - Funding Information: The authors would like to acknowledgeDr. Richard Westhoff of LSRL for the SiGeC alloy growth. This work was partially supported by ONR under Contract NO.N0014-95-1-0675. Funding Information: The authors would like to acknowledge Dr. Richard Westhoff of LSRL for the SiGeC alloy growth. This work was partially supported by ONR under Contract NO.N OO14-95-1-0675. Publisher Copyright: © 1996 IEEE

PY - 1996

Y1 - 1996

N2 - We demonstrate a Si-based photodetector with a response in the 1.3-1.55 µm wavelengthrange. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-µm long waveguide is 0.2% at 1.55 µm, and 8% at 1.3 µm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 µm wavelength range.

AB - We demonstrate a Si-based photodetector with a response in the 1.3-1.55 µm wavelengthrange. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 Å. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-µm long waveguide is 0.2% at 1.55 µm, and 8% at 1.3 µm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 µm wavelength range.

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U2 - 10.1109/68.553101

DO - 10.1109/68.553101

M3 - Conference article

AN - SCOPUS:0030422223

SN - 0163-1918

SP - 665

EP - 668

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

EPITAXIAL SiGeC/Si PHOTODETECTOR WITH RESPONSE IN THE 1.3 - 1.55 µm WAVELENGTH RANGE

Abstract

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