Epitaxial SiGeC/Si photodetector with response in the 1.3 - 1.55 μm wavelength range

F. Y. Huang, Shawn G. Thomas, Michael Chu, Kang L. Wang

Research output: Contribution to journalConference articlepeer-review

8 Citations (Scopus)


We demonstrate a Si-based photodetector with a response in the 1.3-1.55 μm wavelength range. The active absorption layer of the pin photodiode consists of a pseudomorphic SiGeC alloy grown on a Si substrate with a Ge content of 55% and a thickness of 800 angstrom. By using a single-mode fiber butt coupled to the waveguide facet, the external quantum efficiency for a 400-μm long waveguide is 0.2% at 1.55 μm, and 8% at 1.3 μm. The external efficiency can be further improved by using a multiple layer absorber structure. The high efficiency and high speed characteristics together with the low leakage current density imply potential application of the SiGeC/Si photodetector for optical fiber communications and optical interconnects in the 1.3-1.55 μm wavelength range.

Original languageEnglish
Pages (from-to)665-668
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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