EPITAXY OF ARSENIC-PRESSURE-CONTROLLED MBE-GROWN GaAs LAYERS.

Y. H. Wang, W. C. Liu, C. Y. Chang, M. S. Jean, S. A. Liao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Surface morphologies of the molecular beam epitaxy (MBE)-grown GaAs layers using the background-arsenic-pressure-control method were investigated. The growth parameters, such as substrate temperature, growth rate, epilayer thickness, As/Ga ratio, doping concentration substrate type, etc. , are related to the observed oval defect density. Protrusions and Ga-droplets caused oval defects during growth. The origin of the oval defects in our system is found to be the gallium oxide, not Ga 'spitting' from the effusion cell.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages49-54
Number of pages6
ISBN (Print)0931837219
Publication statusPublished - 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume56
ISSN (Print)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'EPITAXY OF ARSENIC-PRESSURE-CONTROLLED MBE-GROWN GaAs LAYERS.'. Together they form a unique fingerprint.

Cite this