Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

T. S. Yeoh, Chuan-Pu Liu, R. B. Swint, A. E. Huber, S. D. Roh, C. Y. Woo, K. E. Lee, J. J. Coleman

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots is attributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7 × 1010 cm-2 was achieved on GaAs, and a highly localized InAs quantum dot density of over 5 × 1012 cm-2 was achieved on 2D InAs islands.

Original languageEnglish
Pages (from-to)221-223
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number2
DOIs
Publication statusPublished - 2001 Jul 9

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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