Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

T. S. Yeoh; Chuan-Pu Liu; R. B. Swint; A. E. Huber; S. D. Roh; C. Y. Woo; K. E. Lee; J. J. Coleman

doi:10.1063/1.1379981

Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

T. S. Yeoh, Chuan-Pu Liu, R. B. Swint, A. E. Huber, S. D. Roh, C. Y. Woo, K. E. Lee, J. J. Coleman

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots is attributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7 × 10¹⁰ cm^-2 was achieved on GaAs, and a highly localized InAs quantum dot density of over 5 × 10¹² cm^-2 was achieved on 2D InAs islands.

Original language	English
Pages (from-to)	221-223
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	2
DOIs	https://doi.org/10.1063/1.1379981
Publication status	Published - 2001 Jul 9

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1379981

Fingerprint Dive into the research topics of 'Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this

@article{bc51d7effe81423f8d66d0ca613ad667,

title = "Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition",

abstract = "Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots is attributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7 × 1010 cm-2 was achieved on GaAs, and a highly localized InAs quantum dot density of over 5 × 1012 cm-2 was achieved on 2D InAs islands.",

author = "Yeoh, {T. S.} and Chuan-Pu Liu and Swint, {R. B.} and Huber, {A. E.} and Roh, {S. D.} and Woo, {C. Y.} and Lee, {K. E.} and Coleman, {J. J.}",

year = "2001",

month = jul,

day = "9",

doi = "10.1063/1.1379981",

language = "English",

volume = "79",

pages = "221--223",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition. / Yeoh, T. S.; Liu, Chuan-Pu; Swint, R. B.; Huber, A. E.; Roh, S. D.; Woo, C. Y.; Lee, K. E.; Coleman, J. J.

In: Applied Physics Letters, Vol. 79, No. 2, 09.07.2001, p. 221-223.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition

AU - Yeoh, T. S.

AU - Liu, Chuan-Pu

AU - Swint, R. B.

AU - Huber, A. E.

AU - Roh, S. D.

AU - Woo, C. Y.

AU - Lee, K. E.

AU - Coleman, J. J.

PY - 2001/7/9

Y1 - 2001/7/9

N2 - Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots is attributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7 × 1010 cm-2 was achieved on GaAs, and a highly localized InAs quantum dot density of over 5 × 1012 cm-2 was achieved on 2D InAs islands.

AB - Fully coherent InAs quantum dots and InAs quantum dots grown on self-organized two-dimensional (2D) islands by atmospheric pressure metalorganic chemical vapor deposition are investigated. The significantly lower critical thickness window of between 1 and 2.0 monolayers for fully coherent dots is attributed to the suppression of a segregated indium floating layer. An InAs quantum dot density of 4.7 × 1010 cm-2 was achieved on GaAs, and a highly localized InAs quantum dot density of over 5 × 1012 cm-2 was achieved on 2D InAs islands.

UR - http://www.scopus.com/inward/record.url?scp=0035832945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035832945&partnerID=8YFLogxK

U2 - 10.1063/1.1379981

DO - 10.1063/1.1379981

M3 - Article

AN - SCOPUS:0035832945

VL - 79

SP - 221

EP - 223

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -