Epitaxy of Zn2TiO4 (1 1 1) thin films on GaN (0 0 1)

Chu Yun Hsiao; Jhih Cheng Wu; Chuan Feng Shih

doi:10.1016/j.materresbull.2012.11.066

Epitaxy of Zn₂TiO₄ (1 1 1) thin films on GaN (0 0 1)

Chu Yun Hsiao, Jhih Cheng Wu, Chuan Feng Shih

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

High-permittivity spinel Zn₂TiO₄ thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn₂TiO₄ films. Lattice image at the Zn₂TiO₄ (1 1 1)/GaN (0 0 1) interface was obtained by high-resolution transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (11)Zn₂TiO₄||(001) _GaN, (202)Zn₂TiO₄||(_110)GaN,and 211Zn₂TiO₄||_0110GaN. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn ₂TiO₄ based capacitor were ∼18.9, 8.38 × 10 ¹¹ eV^-1 cm^-2, and 1.1 V, respectively, indicating the potential applications of the Zn₂TiO₄ thin film to the GaN-based metal-oxide-semiconductor capacitor.

Original language	English
Pages (from-to)	1316-1320
Number of pages	5
Journal	Materials Research Bulletin
Volume	48
Issue number	3
DOIs	https://doi.org/10.1016/j.materresbull.2012.11.066
Publication status	Published - 2013 Mar 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Epitaxy of Zn2TiO4 (1 1 1) thin films on GaN (0 0 1)",

abstract = "High-permittivity spinel Zn2TiO4 thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn2TiO4 films. Lattice image at the Zn2TiO4 (1 1 1)/GaN (0 0 1) interface was obtained by high-resolution transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (11)Zn2TiO4||(001) GaN, (202)Zn2TiO4||(110)GaN,and 211Zn2TiO4||0110GaN. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn 2TiO4 based capacitor were ∼18.9, 8.38 × 10 11 eV-1 cm-2, and 1.1 V, respectively, indicating the potential applications of the Zn2TiO4 thin film to the GaN-based metal-oxide-semiconductor capacitor.",

author = "Hsiao, {Chu Yun} and Wu, {Jhih Cheng} and Shih, {Chuan Feng}",

year = "2013",

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doi = "10.1016/j.materresbull.2012.11.066",

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AU - Hsiao, Chu Yun

AU - Wu, Jhih Cheng

AU - Shih, Chuan Feng

PY - 2013/3/1

Y1 - 2013/3/1

N2 - High-permittivity spinel Zn2TiO4 thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn2TiO4 films. Lattice image at the Zn2TiO4 (1 1 1)/GaN (0 0 1) interface was obtained by high-resolution transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (11)Zn2TiO4||(001) GaN, (202)Zn2TiO4||(110)GaN,and 211Zn2TiO4||0110GaN. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn 2TiO4 based capacitor were ∼18.9, 8.38 × 10 11 eV-1 cm-2, and 1.1 V, respectively, indicating the potential applications of the Zn2TiO4 thin film to the GaN-based metal-oxide-semiconductor capacitor.

AB - High-permittivity spinel Zn2TiO4 thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn2TiO4 films. Lattice image at the Zn2TiO4 (1 1 1)/GaN (0 0 1) interface was obtained by high-resolution transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (11)Zn2TiO4||(001) GaN, (202)Zn2TiO4||(110)GaN,and 211Zn2TiO4||0110GaN. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn 2TiO4 based capacitor were ∼18.9, 8.38 × 10 11 eV-1 cm-2, and 1.1 V, respectively, indicating the potential applications of the Zn2TiO4 thin film to the GaN-based metal-oxide-semiconductor capacitor.

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