Epitaxy of Zn2TiO4 (1 1 1) thin films on GaN (0 0 1)

Chu Yun Hsiao, Jhih Cheng Wu, Chuan Feng Shih

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3 Citations (Scopus)

Abstract

High-permittivity spinel Zn2TiO4 thin films were grown on GaN (0 0 1) by rf-sputtering. Grazing-angle, powder, and pole-figure X-ray diffractometries (XRD) were performed to identify the crystallinity and the preferred orientation of the Zn2TiO4 films. Lattice image at the Zn2TiO4 (1 1 1)/GaN (0 0 1) interface was obtained by high-resolution transmission-electron microscopy (HR-TEM). An oxygen atmosphere in sputtering and post heat-treatment using rapid thermal annealing effectively enhanced the epitaxy. The epitaxial relationship was determined from the XRD and HR-TEM results: (11)Zn2TiO4||(001) GaN, (202)Zn2TiO4||(110)GaN,and 211Zn2TiO4||0110GaN. Finally, the relative permittivity, interfacial trap density and the flat-band voltage of the Zn 2TiO4 based capacitor were ∼18.9, 8.38 × 10 11 eV-1 cm-2, and 1.1 V, respectively, indicating the potential applications of the Zn2TiO4 thin film to the GaN-based metal-oxide-semiconductor capacitor.

Original languageEnglish
Pages (from-to)1316-1320
Number of pages5
JournalMaterials Research Bulletin
Volume48
Issue number3
DOIs
Publication statusPublished - 2013 Mar 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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