Er 3+ interlayer energy migration as the limiting photoluminescence quenching factor in nanostructured Er 3+:Y 2O 3 thin films

J. Hoang, Robert N. Schwartz, Kang L. Wang, J. P. Chang

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We report the effects of Er 3+ nanostructuring on optical properties of heterogeneously doped Er 3+:Y 2O 3 thin films synthesized by radical enhanced atomic layer deposition. By alternating the cycle sequences of Y 2O 3 and Er 2O 3, rare earth (RE) ion concentrations were controlled from 4.8 to 11.8 at. Er and the local Er 2O 3 thicknesses were varied between 0.7 to 7.6 Å. Photoluminescence (PL) was used to examine the 1535 nm (Er 4I 13/24I 15/2) emission at two excitation wavelengths, 488 nm and 976 nm. The normalized PL increased with increasing Er 3+ concentrations up to 11.8 and 9.6 at. under 488 and 976 nm excitations, respectively. The introduction of a local Er 2O 3 layer greater than 2.4 Å resulted in significant PL quenching, over an order of magnitude, under both excitation wavelengths. The quenching was attributed to enhanced local Er 3+Er 3+ interlayer energy migration. Compared to homogeneously doped RE systems where the RE concentration is directly related to the average RERE spatial distance, increased luminescence was observed at high Er 3+ concentrations in heterogeneously doped systems. These results suggest that controlling the RE proximity is key to engineering the optical properties of RE doped heterogeneous materials.

Original languageEnglish
Article number023116
JournalJournal of Applied Physics
Volume112
Issue number2
DOIs
Publication statusPublished - 2012 Jul 15

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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