Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

Ching Sung Lee; Wei-Chou Hsu

doi:10.1016/S0749-6036(02)00122-2

Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

Research output: Contribution to journal › Comment/debate

Original language	English
Number of pages	1
Journal	Superlattices and Microstructures
Volume	32
Issue number	2-3
DOIs	https://doi.org/10.1016/S0749-6036(02)00122-2
Publication status	Published - 2002 Jan 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Lee, C. S., & Hsu, W-C. (2002). Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005). Superlattices and Microstructures, 32(2-3). https://doi.org/10.1016/S0749-6036(02)00122-2

@article{bc41a26aafc746c4bef88a9a019dc2d8,

title = "Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)",

author = "Lee, {Ching Sung} and Wei-Chou Hsu",

year = "2002",

month = jan

day = "1",

doi = "10.1016/S0749-6036(02)00122-2",

language = "English",

volume = "32",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2-3",

}

Erratum : Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005). / Lee, Ching Sung; Hsu, Wei-Chou.

In: Superlattices and Microstructures, Vol. 32, No. 2-3, 01.01.2002.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

AU - Lee, Ching Sung

AU - Hsu, Wei-Chou

PY - 2002/1/1

Y1 - 2002/1/1

UR - http://www.scopus.com/inward/record.url?scp=22944480889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22944480889&partnerID=8YFLogxK

U2 - 10.1016/S0749-6036(02)00122-2

DO - 10.1016/S0749-6036(02)00122-2

M3 - Comment/debate

AN - SCOPUS:22944480889

VL - 32

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 2-3

ER -

Access to Document

10.1016/S0749-6036(02)00122-2