| Original language | English |
|---|---|
| Number of pages | 1 |
| Journal | Superlattices and Microstructures |
| Volume | 32 |
| Issue number | 2-3 |
| DOIs |
|
| Publication status | Published - 2002 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
}
Erratum : Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005). / Lee, Ching Sung; Hsu, Wei-Chou.
In: Superlattices and Microstructures, Vol. 32, No. 2-3, 01.01.2002.Research output: Contribution to journal › Comment/debate
TY - JOUR
T1 - Erratum
T2 - Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)
AU - Lee, Ching Sung
AU - Hsu, Wei-Chou
PY - 2002/1/1
Y1 - 2002/1/1
UR - http://www.scopus.com/inward/record.url?scp=22944480889&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=22944480889&partnerID=8YFLogxK
U2 - 10.1016/S0749-6036(02)00122-2
DO - 10.1016/S0749-6036(02)00122-2
M3 - Comment/debate
VL - 32
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
SN - 0749-6036
IS - 2-3
ER -