Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

Ching Sung Lee; Wei Chou Hsu

doi:10.1016/S0749-6036(02)00122-2

Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

Institute of Microelectronics

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Pages (from-to)	153
Number of pages	1
Journal	Superlattices and Microstructures
Volume	32
Issue number	2-3
DOIs	https://doi.org/10.1016/S0749-6036(02)00122-2
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0749-6036(02)00122-2

Cite this

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title = "Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)",

author = "Lee, {Ching Sung} and Hsu, {Wei Chou}",

year = "2002",

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language = "English",

volume = "32",

pages = "153",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2-3",

}

Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005). / Lee, Ching Sung; Hsu, Wei Chou.
In: Superlattices and Microstructures, Vol. 32, No. 2-3, 2002, p. 153.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

AU - Lee, Ching Sung

AU - Hsu, Wei Chou

PY - 2002

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M3 - Comment/debate

AN - SCOPUS:22944480889

SN - 0749-6036

VL - 32

SP - 153

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2-3

ER -

Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)

All Science Journal Classification (ASJC) codes

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