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Dive into the research topics of 'Erratum: Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (Superlattices and Microstructures, (2001) 30:3 (145-158) DOI:10.1006/spmi.2001. 1005)'. Together they form a unique fingerprint.- Sort by
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