Erratum: "Electronic structures of In1-xGa xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))

M. P. Houng; Y. C. Chang

doi:10.1063/1.343440

Erratum: "Electronic structures of In_1-xGa _xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))

M. P. Houng, Y. C. Chang

Department of Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

5 Citations (Scopus)

Original language	English
Pages (from-to)	4990-4994
Number of pages	5
Journal	Journal of Applied Physics
Volume	65
Issue number	12
DOIs	https://doi.org/10.1063/1.343440
Publication status	Published - 1989

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.343440

Cite this

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Erratum: "Electronic structures of In1-xGa xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))

All Science Journal Classification (ASJC) codes

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Erratum: "Electronic structures of In_1-xGa _xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))