Erratum: "Electronic structures of In1-xGa xAs-InP strained-layer quantum wells" (Journal of Applied Physics (1989) 65 (3096))

M. P. Houng, Y. C. Chang

Research output: Contribution to journalComment/debate

5 Citations (Scopus)
Original languageEnglish
Pages (from-to)4990-4994
Number of pages5
JournalJournal of Applied Physics
Volume65
Issue number12
DOIs
Publication statusPublished - 1989 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this