Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

C. S. Lee; Wei-Chou Hsu

doi:10.1063/1.2033141

Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	089901
Journal	Applied Physics Letters
Volume	87
Issue number	8
DOIs	https://doi.org/10.1063/1.2033141
Publication status	Published - 2005 Aug 22

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lee, C. S., & Hsu, W-C. (2005). Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505)). Applied Physics Letters, 87(8), [089901]. https://doi.org/10.1063/1.2033141

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Access to Document

10.1063/1.2033141