Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

TY - JOUR

T1 - Erratum

T2 - Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

AU - Lee, C. S.

AU - Hsu, W. C.

PY - 2005/8/22

Y1 - 2005/8/22

UR - http://www.scopus.com/inward/record.url?scp=24344496546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24344496546&partnerID=8YFLogxK

U2 - 10.1063/1.2033141

DO - 10.1063/1.2033141

M3 - Comment/debate

AN - SCOPUS:24344496546

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 089901

ER -