Erratum: Functional characteristics in asymmetric source/drain InAlAsSbInGaAsInP δ -doped high electron mobility transistor (Applied Physics Letters (2005) 86 (033505))

C. S. Lee, Wei-Chou Hsu

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number089901
JournalApplied Physics Letters
Issue number8
Publication statusPublished - 2005 Aug 22

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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