Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

Devin Verreck, Anne S. Verhulst, Kuo Hsing Kao, William G. Vandenberghe, Kristin De Meyer, Guido Groeseneken

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number6588911
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2013 Oct 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this