Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

Devin Verreck; Anne S. Verhulst; Kuo Hsing Kao; William G. Vandenberghe; Kristin De Meyer; Guido Groeseneken

doi:10.1109/TED.2013.2278209

Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

Devin Verreck, Anne S. Verhulst, Kuo Hsing Kao, William G. Vandenberghe, Kristin De Meyer, Guido Groeseneken

Master Degree Program on Nano-Integrated-Circuit Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	6588911
Pages (from-to)	3605
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	60
Issue number	10
DOIs	https://doi.org/10.1109/TED.2013.2278209
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2013.2278209

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Verreck, D., Verhulst, A. S., Kao, K. H., Vandenberghe, W. G., De Meyer, K., & Groeseneken, G. (2013). Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134)). IEEE Transactions on Electron Devices, 60(10), 3605. Article 6588911. https://doi.org/10.1109/TED.2013.2278209

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title = "Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))",

author = "Devin Verreck and Verhulst, {Anne S.} and Kao, {Kuo Hsing} and Vandenberghe, {William G.} and {De Meyer}, Kristin and Guido Groeseneken",

year = "2013",

doi = "10.1109/TED.2013.2278209",

language = "English",

volume = "60",

pages = "3605",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

Verreck, D, Verhulst, AS, Kao, KH, Vandenberghe, WG, De Meyer, K & Groeseneken, G 2013, 'Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))', IEEE Transactions on Electron Devices, vol. 60, no. 10, 6588911, pp. 3605. https://doi.org/10.1109/TED.2013.2278209

Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134)). / Verreck, Devin; Verhulst, Anne S.; Kao, Kuo Hsing et al.
In: IEEE Transactions on Electron Devices, Vol. 60, No. 10, 6588911, 2013, p. 3605.

Research output: Contribution to journal › Comment/debate › peer-review

TY - JOUR

T1 - Erratum

T2 - Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

AU - Verreck, Devin

AU - Verhulst, Anne S.

AU - Kao, Kuo Hsing

AU - Vandenberghe, William G.

AU - De Meyer, Kristin

AU - Groeseneken, Guido

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DO - 10.1109/TED.2013.2278209

M3 - Comment/debate

AN - SCOPUS:84884693425

SN - 0018-9383

VL - 60

SP - 3605

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

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ER -

Erratum: Quantum mechanical performance predictions of p-n-i-n versus pocketed line tunnel field-effect transistors (IEEE Transactions on Electron Devices (2013) 60:7 (2128-2134))

All Science Journal Classification (ASJC) codes

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