ESD engineering of nitride-based LEDs

Y. K. Su, S. J. Chang, S. C. Wei, Shi Ming Chen, Wen Liang Li

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume5
Issue number2
DOIs
Publication statusPublished - 2005 Jun 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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