ESD engineering of nitride-based LEDs

Y. K. Su; S. J. Chang; S. C. Wei; Shi Ming Chen; Wen Liang Li

doi:10.1109/TDMR.2005.847197

ESD engineering of nitride-based LEDs

Y. K. Su, S. J. Chang, S. C. Wei, Shi Ming Chen, Wen Liang Li

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.

Original language	English
Pages (from-to)	277-281
Number of pages	5
Journal	IEEE Transactions on Device and Materials Reliability
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/TDMR.2005.847197
Publication status	Published - 2005 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

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10.1109/TDMR.2005.847197

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@article{7a0e3c5a59554fc9b2d4b6392713a4bd,

title = "ESD engineering of nitride-based LEDs",

abstract = "GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.",

author = "Su, {Y. K.} and Chang, {S. J.} and Wei, {S. C.} and Chen, {Shi Ming} and Li, {Wen Liang}",

note = "Funding Information: Manuscript received August 4, 2004; revised December 1, 2004. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. Y. K. Su, S. J. Chang, and S. C. Wei are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: changsj@mail.ncku.edu.tw). S.-M. Chen and W.-L. Li are with Epitech Technology Corporation, Tainan 74145, Taiwan, R.O.C. Digital Object Identifier 10.1109/TDMR.2005.847197",

year = "2005",

month = jun,

doi = "10.1109/TDMR.2005.847197",

language = "English",

volume = "5",

pages = "277--281",

journal = "IEEE Transactions on Device and Materials Reliability",

issn = "1530-4388",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - ESD engineering of nitride-based LEDs

AU - Su, Y. K.

AU - Chang, S. J.

AU - Wei, S. C.

AU - Chen, Shi Ming

AU - Li, Wen Liang

N1 - Funding Information: Manuscript received August 4, 2004; revised December 1, 2004. This work was supported by the National Science Council under Contract NSC-89-2215-E-006-095. Y. K. Su, S. J. Chang, and S. C. Wei are with the Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. (e-mail: changsj@mail.ncku.edu.tw). S.-M. Chen and W.-L. Li are with Epitech Technology Corporation, Tainan 74145, Taiwan, R.O.C. Digital Object Identifier 10.1109/TDMR.2005.847197

PY - 2005/6

Y1 - 2005/6

N2 - GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.

AB - GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900°C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040°C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040°C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.

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U2 - 10.1109/TDMR.2005.847197

DO - 10.1109/TDMR.2005.847197

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VL - 5

SP - 277

EP - 281

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

IS - 2

ER -

ESD engineering of nitride-based LEDs

Abstract

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