Etching behavior of silicon using CO2 laser

Chen-Kuei Chung, M. Y. Wu, E. J. Hsiao, Y. C. Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we extended the silicon (Si) etching behavior using CO 2 laser with glass attached to the Si backside. The CO2 laser with a wavelength of 10.64 um is not absorbed by Si material and cannot do any micromachining for pure Si. However, Si becomes able to be etched by CO2 laser as we put a glass below Si. The etching occurs from the top surface of Si downward to the bottom. If the time is enough long, it will etch through the Si wafer to be a hole structure. The Si etching depth increases with increasing laser power and pass number. The diameters of hole vary with the laser power, pass number and scanning speed. The mechanism may be involved in the interaction between photon, thermal and electron properties of materials to change the Si absorption behavior. It needs further studying in future and will be a promising technology in Si micromachining for the application of microdevices and MEMS.

Original languageEnglish
Title of host publicationProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages59-62
Number of pages4
DOIs
Publication statusPublished - 2007 Aug 28
Event2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 - Bangkok, Thailand
Duration: 2007 Jan 162007 Jan 19

Publication series

NameProceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007

Other

Other2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
CountryThailand
CityBangkok
Period07-01-1607-01-19

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Computer Science Applications
  • Electrical and Electronic Engineering

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