Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect

K. W. Chen, Y. L. Wang, Chuan-Pu Liu, Kevin Yang, L. Chang, Kuang-Yao Lo, C. W. Liu

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

According to rapid development of CMP technology, the difference of polishing methods would be applied for copper damascene interconnect. These methods include conventional rotary, linear, oscillation platform. The advantages of these platform would highlighted in uniformity control, stability of removal rate, planarization efficiency, throughput promotion, lower cost of ownership, even dishing and erosion effect integrated with slurry. This paper presented our experience to compare the uniformity, removal rate and planarization efficiency of Cu-CMP between various polishing platforms. In convection, the rotary or oscillation platform would be usually applied in oxide and tungsten CMP, due to the robust air-back carrier and rigid platen to polish the wafer, which performs the good reliability on wafer-to-wafer thickness and endpoint detection. However, the linear polisher is made of the air-bearing moving belt and self-rotated carrier and would provide the wider uniformity and planarization control window than others. In addition, the simulation model would explain the difference from mechanic design and wafer moving paths between various polishing techniques. Hence, the trade-off advantage and application between various platforms would be compensated and integrated with slurry, conditioners and coming thickness profile from copper plating. It can achieve the optimization of Cu-CMP process.

Original languageEnglish
Pages (from-to)531-536
Number of pages6
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Fingerprint

Cytidine Monophosphate
Chemical mechanical polishing
Polishing
Copper
platforms
copper
polishing
evaluation
wafers
Bearings (structural)
Copper plating
Air
Industrial Oils
Tungsten
control stability
Erosion
platens
Mechanics
oscillations
gas bearings

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Chen, K. W. ; Wang, Y. L. ; Liu, Chuan-Pu ; Yang, Kevin ; Chang, L. ; Lo, Kuang-Yao ; Liu, C. W. / Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 531-536.
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Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect. / Chen, K. W.; Wang, Y. L.; Liu, Chuan-Pu; Yang, Kevin; Chang, L.; Lo, Kuang-Yao; Liu, C. W.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 531-536.

Research output: Contribution to journalConference article

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