Evaluation of strain measurement in a die-to-interposer chip using in situ synchrotron X-Ray diffraction and finite-element analysis

Hsueh Hsien Hsu, Tz Cheng Chiu, Tao Chih Chang, Shin Yi Huang, Hsin Yi Lee, Ching Shun Ku, Yang Yi Lin, Chien Hao Su, Li Wei Chou, Yao Tsung Ouyang, Yi Ting Huang, Albert T. Wu

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Abstract

To decrease the size of portable devices, this study incorporates a stacked three-dimensional integrated circuit architecture into advanced packaging techniques. The traditional FR-4 substrate was substituted with silicon interposers. Because silicon is rigid and highly resistant to deformation, this minimizes thermal stress caused by thermal expansion mismatch in the structure. This study shows that underfill applied stress to the dies when the temperature was varied, threatening the devices. Damage was most likely to occur at the die corners. The stresses were measured in situ at different temperatures using synchrotron radiation x-ray analysis. Simulation results confirm the measured data trends.

Original languageEnglish
Pages (from-to)52-56
Number of pages5
JournalJournal of Electronic Materials
Volume43
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hsu, H. H., Chiu, T. C., Chang, T. C., Huang, S. Y., Lee, H. Y., Ku, C. S., Lin, Y. Y., Su, C. H., Chou, L. W., Ouyang, Y. T., Huang, Y. T., & Wu, A. T. (2014). Evaluation of strain measurement in a die-to-interposer chip using in situ synchrotron X-Ray diffraction and finite-element analysis. Journal of Electronic Materials, 43(1), 52-56. https://doi.org/10.1007/s11664-013-2828-0