Evaluation of the perfection of the Pd-Inp Schottky interface from the energy viewpoint of hydrogen adsorbates

Huey Ing Chen, Yen I. Chou

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

In general, two factors, i.e. the Schottky barrier height (Φ Bn) and the ideality factor (n) based on thermionic emission current-voltage (I-V) analysis, are used to evaluate the interfacial quality of Schottky diodes. In this paper, we propose an alternative method, different from the traditional I-V analysis, to evaluate the perfection of the Pd-InP Schottky interface. By introducing hydrogen adsorbates into the Pd-lnP interface, it is found that the interfacial hydrogen energy state can reflect the perfection of the Pd-InP Schottky interface. The Pd/InP Schottky diode with a more perfect interface infers that the interfacial hydrogen adsorbates possess higher energy states. Compared with the thermal evaporated Pd-InP Schottky interface, the electroless plated diode exhibits superior I-V characteristics. Also, it demonstrates that hydrogen adsorbates at the electroless plated Pd-InP interface truly possess higher energy states, e.g., Gibbs energy (G) and enthalpy (H). Therefore, this proposed method can be used for evaluating the perfection of the Pd-InP Schottky interface. Also, the result is consistent with that obtained by traditional I-V analysis.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalSemiconductor Science and Technology
Volume19
Issue number1
DOIs
Publication statusPublished - 2004 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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