Evidence of change in crystallization behavior of thin HfO2 on Si

Effects of self-formed SiO2 capping layer

Chuan-Feng Shih, Chu Yun Hsiao, Yu Chih Hsiao, Bo Cun Chen, Ching Chich Leu

Research output: Contribution to journalArticle

Abstract

This study evidences that the crystallization behavior of a thin HfO 2 on Si substrate is strongly associated with its surface condition through a self-formed capping layer, which hinders the natural behaviors of most HfO2 films. A self-formed SiO2 layer was found on top of HfO2 by emitting Si from the SiO2 layer that was grown simultaneously at a HfO2/Si interface during annealing, inhibiting the crystallization of HfO2. The suppression of crystallization of HfO2 was also obtained by decomposing a thin 3- aminopropyltrimethoxysilane layer. We thus suggested that the surface-induced variation of crystallinity of HfO2 should be carefully concerned for device applications.

Original languageEnglish
Pages (from-to)291-293
Number of pages3
JournalThin Solid Films
Volume556
DOIs
Publication statusPublished - 2014 Apr 1

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Crystallization
crystallization
Annealing
crystallinity
retarding
Substrates
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Shih, Chuan-Feng ; Hsiao, Chu Yun ; Hsiao, Yu Chih ; Chen, Bo Cun ; Leu, Ching Chich. / Evidence of change in crystallization behavior of thin HfO2 on Si : Effects of self-formed SiO2 capping layer. In: Thin Solid Films. 2014 ; Vol. 556. pp. 291-293.
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abstract = "This study evidences that the crystallization behavior of a thin HfO 2 on Si substrate is strongly associated with its surface condition through a self-formed capping layer, which hinders the natural behaviors of most HfO2 films. A self-formed SiO2 layer was found on top of HfO2 by emitting Si from the SiO2 layer that was grown simultaneously at a HfO2/Si interface during annealing, inhibiting the crystallization of HfO2. The suppression of crystallization of HfO2 was also obtained by decomposing a thin 3- aminopropyltrimethoxysilane layer. We thus suggested that the surface-induced variation of crystallinity of HfO2 should be carefully concerned for device applications.",
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Evidence of change in crystallization behavior of thin HfO2 on Si : Effects of self-formed SiO2 capping layer. / Shih, Chuan-Feng; Hsiao, Chu Yun; Hsiao, Yu Chih; Chen, Bo Cun; Leu, Ching Chich.

In: Thin Solid Films, Vol. 556, 01.04.2014, p. 291-293.

Research output: Contribution to journalArticle

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AB - This study evidences that the crystallization behavior of a thin HfO 2 on Si substrate is strongly associated with its surface condition through a self-formed capping layer, which hinders the natural behaviors of most HfO2 films. A self-formed SiO2 layer was found on top of HfO2 by emitting Si from the SiO2 layer that was grown simultaneously at a HfO2/Si interface during annealing, inhibiting the crystallization of HfO2. The suppression of crystallization of HfO2 was also obtained by decomposing a thin 3- aminopropyltrimethoxysilane layer. We thus suggested that the surface-induced variation of crystallinity of HfO2 should be carefully concerned for device applications.

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