This study evidences that the crystallization behavior of a thin HfO 2 on Si substrate is strongly associated with its surface condition through a self-formed capping layer, which hinders the natural behaviors of most HfO2 films. A self-formed SiO2 layer was found on top of HfO2 by emitting Si from the SiO2 layer that was grown simultaneously at a HfO2/Si interface during annealing, inhibiting the crystallization of HfO2. The suppression of crystallization of HfO2 was also obtained by decomposing a thin 3- aminopropyltrimethoxysilane layer. We thus suggested that the surface-induced variation of crystallinity of HfO2 should be carefully concerned for device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry