Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition

T. S. Yeoh, C. P. Liu, Y. W. Kim, J. J. Coleman

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

Original languageEnglish
Pages (from-to)O8.7.1-O8.7.5
JournalMaterials Research Society Symposium - Proceedings
Volume672
DOIs
Publication statusPublished - 2001
EventMechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 20

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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