Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition

T. S. Yeoh, Chuan-Pu Liu, Y. W. Kim, J. J. Coleman

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume672
Publication statusPublished - 2001 Dec 1
EventMechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States
Duration: 2001 Apr 172001 Apr 20

Fingerprint

Metallorganic chemical vapor deposition
Semiconductor quantum dots
metalorganic chemical vapor deposition
interruption
quantum dots
Defects
Chemical potential
defects
Photoluminescence
Transmission electron microscopy
photoluminescence
transmission electron microscopy
Substrates
indium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.",
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Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition. / Yeoh, T. S.; Liu, Chuan-Pu; Kim, Y. W.; Coleman, J. J.

In: Materials Research Society Symposium - Proceedings, Vol. 672, 01.12.2001.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition

AU - Yeoh, T. S.

AU - Liu, Chuan-Pu

AU - Kim, Y. W.

AU - Coleman, J. J.

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N2 - InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

AB - InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

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VL - 672

JO - Materials Research Society Symposium - Proceedings

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