TY - JOUR
T1 - Evolution of coherent InAs quantum dots above the coherent critical thickness window by metalorganic chemical vapor deposition
AU - Yeoh, T. S.
AU - Liu, C. P.
AU - Kim, Y. W.
AU - Coleman, J. J.
N1 - Funding Information:
This work was supported by NSF DMR 97-05440 and the DARPA University Optoelectronics Centers program. The authors would like to thank David Cahill for his advice and counsel, Mark Kleinschmit, Brad Clymer, and Wei Luncun for their technical assistance in RBS.
PY - 2001
Y1 - 2001
N2 - InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.
AB - InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.
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U2 - 10.1557/proc-671-q8.7
DO - 10.1557/proc-671-q8.7
M3 - Conference article
AN - SCOPUS:0035557865
SN - 0272-9172
VL - 672
SP - O8.7.1-O8.7.5
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Mechanisms of Surface and Microstructure Evolution in Deposited Films and Structures
Y2 - 17 April 2001 through 20 April 2001
ER -