Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

Arvind Raviswaran; Chuan Pu Liu; Jaichan Kim; David G. Cahill; J. Murray Gibson

doi:10.1103/physrevb.63.125314

Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

Arvind Raviswaran, Chuan Pu Liu, Jaichan Kim, David G. Cahill, J. Murray Gibson

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>10¹¹ cm^-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.

Original language	English
Article number	125314
Pages (from-to)	1253141-1253145
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	63
Issue number	12
DOIs	https://doi.org/10.1103/physrevb.63.125314
Publication status	Published - 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/physrevb.63.125314

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title = "Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)",

abstract = "Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.",

author = "Arvind Raviswaran and Liu, {Chuan Pu} and Jaichan Kim and Cahill, {David G.} and Gibson, {J. Murray}",

year = "2001",

doi = "10.1103/physrevb.63.125314",

language = "English",

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T1 - Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

AU - Raviswaran, Arvind

AU - Liu, Chuan Pu

AU - Kim, Jaichan

AU - Cahill, David G.

AU - Gibson, J. Murray

PY - 2001

Y1 - 2001

N2 - Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.

AB - Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.

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Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

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