Abstract
Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.
Original language | English |
---|---|
Article number | 125314 |
Pages (from-to) | 1253141-1253145 |
Number of pages | 5 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 63 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2001 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics