Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)

Arvind Raviswaran, Chuan Pu Liu, Jaichan Kim, David G. Cahill, J. Murray Gibson

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.

Original languageEnglish
Article number125314
Pages (from-to)1253141-1253145
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number12
Publication statusPublished - 2001 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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