TY - JOUR
T1 - Exchange bias in bilayers based on the ferroelectric antiferromagnet BiFeO3
AU - Qi, X.
AU - Kim, H.
AU - Blamire, M. G.
N1 - Funding Information:
This work was supported by Samsung Electronics and the UK Engineering and Physical Sciences Research Council (EPSRC).
PY - 2007/3
Y1 - 2007/3
N2 - This paper reports studies of the exchange interaction between the conventional ferromagnets CoFe2O4 and permalloy and the multiferroic antiferromagnet BiFeO3 films. Bilayer films were grown which demonstrated significant exchange bias at room temperature. BiFeO3 films grown under the same conditions also showed a large electric polarization. The results are encouraging for room-temperature applications of BiFeO3 with the combined properties of antiferromagnetism and ferroelectricity, but the significant residual leakage in our BiFeO3 films prevented the demonstration of a stable, controllable exchange bias.
AB - This paper reports studies of the exchange interaction between the conventional ferromagnets CoFe2O4 and permalloy and the multiferroic antiferromagnet BiFeO3 films. Bilayer films were grown which demonstrated significant exchange bias at room temperature. BiFeO3 films grown under the same conditions also showed a large electric polarization. The results are encouraging for room-temperature applications of BiFeO3 with the combined properties of antiferromagnetism and ferroelectricity, but the significant residual leakage in our BiFeO3 films prevented the demonstration of a stable, controllable exchange bias.
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U2 - 10.1080/09500830601175496
DO - 10.1080/09500830601175496
M3 - Article
AN - SCOPUS:33947695749
SN - 0950-0839
VL - 87
SP - 175
EP - 181
JO - Philosophical Magazine Letters
JF - Philosophical Magazine Letters
IS - 3-4
ER -