Excimer-laser-induced activation of Mg-doped GaN layers

The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.