Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method

Yu Ru Chen, Long-Sun Chao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200-500 mJ/cm 2), pulse number (1∼10 shots) and coverage fraction (0∼100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

Original languageEnglish
Title of host publicationProgress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture
Pages277-282
Number of pages6
Volume505-507
EditionPART 1
Publication statusPublished - 2006
Event2005 International Conference on Advanced Manufacture, ICAM2005 - Taipei, R.O.C., Taiwan
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Science Forum
NumberPART 1
Volume505-507
ISSN (Print)0255-5476

Other

Other2005 International Conference on Advanced Manufacture, ICAM2005
CountryTaiwan
CityTaipei, R.O.C.
Period05-11-2805-12-02

Fingerprint

laser annealing
Excimer lasers
Polysilicon
excimer lasers
Annealing
grain size
Temperature
Glass
heat
Nucleation
Substrates
energy
glass
nucleation
Lasers
touch
transition points
pulses
Solidification
Laser pulses

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, Y. R., & Chao, L-S. (2006). Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture (PART 1 ed., Vol. 505-507, pp. 277-282). (Materials Science Forum; Vol. 505-507, No. PART 1).
Chen, Yu Ru ; Chao, Long-Sun. / Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method. Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. Vol. 505-507 PART 1. ed. 2006. pp. 277-282 (Materials Science Forum; PART 1).
@inproceedings{ee5e71bbeb9e403d81befdddcccc0852,
title = "Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method",
abstract = "This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200-500 mJ/cm 2), pulse number (1∼10 shots) and coverage fraction (0∼100{\%}). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.",
author = "Chen, {Yu Ru} and Long-Sun Chao",
year = "2006",
language = "English",
isbn = "0878499903",
volume = "505-507",
series = "Materials Science Forum",
number = "PART 1",
pages = "277--282",
booktitle = "Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture",
edition = "PART 1",

}

Chen, YR & Chao, L-S 2006, Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method. in Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 edn, vol. 505-507, Materials Science Forum, no. PART 1, vol. 505-507, pp. 277-282, 2005 International Conference on Advanced Manufacture, ICAM2005, Taipei, R.O.C., Taiwan, 05-11-28.

Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method. / Chen, Yu Ru; Chao, Long-Sun.

Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. Vol. 505-507 PART 1. ed. 2006. p. 277-282 (Materials Science Forum; Vol. 505-507, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method

AU - Chen, Yu Ru

AU - Chao, Long-Sun

PY - 2006

Y1 - 2006

N2 - This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200-500 mJ/cm 2), pulse number (1∼10 shots) and coverage fraction (0∼100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

AB - This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200-500 mJ/cm 2), pulse number (1∼10 shots) and coverage fraction (0∼100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

UR - http://www.scopus.com/inward/record.url?scp=33847760487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847760487&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0878499903

SN - 9780878499908

VL - 505-507

T3 - Materials Science Forum

SP - 277

EP - 282

BT - Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture

ER -

Chen YR, Chao L-S. Experimental analysis for low-temperature poly-Si films produced by using the excimer laser annealing method. In Progress on Advanced Manufacture for Micro/Nano Technology 2005 - Proceedings of the 2005 International Conference on Advanced Manufacture. PART 1 ed. Vol. 505-507. 2006. p. 277-282. (Materials Science Forum; PART 1).