TY - JOUR
T1 - Experimental Demonstration of Spintronic Broadband Microwave Detectors and Their Capability for Powering Nanodevices
AU - Fang, Bin
AU - Carpentieri, Mario
AU - Louis, Steven
AU - Tiberkevich, Vasyl
AU - Slavin, Andrei
AU - Krivorotov, Ilya N.
AU - Tomasello, Riccardo
AU - Giordano, Anna
AU - Jiang, Hongwen
AU - Cai, Jialin
AU - Fan, Yaming
AU - Zhang, Zehong
AU - Zhang, Baoshun
AU - Katine, Jordan A.
AU - Wang, Kang L.
AU - Amiri, Pedram Khalili
AU - Finocchio, Giovanni
AU - Zeng, Zhongming
N1 - Funding Information:
This work was supported the executive programme of scientific and technological cooperation between Italy and China funded by Ministero degli Affari Esteri e della Cooperazione Internazionale and the Minister Of Science and Technology of China of the People’s Republic of China (Grants No. CN16GR09 and No. 2016YFE0104100) and by the National Science Foundation of China (Grants No. 11474311 and No. 11804370). The work at the Oakland University was in part supported by the National Science Foundation of the USA (Grants No. EFMA-1641989 and No. ECCS-1708982), by a grant from DARPA, and by a grant from the Center for NanoFerroic Devices (CNFD) and Nanoelectronics Research Initiative (NRI). The work at UCLA was supported by the Nanoscale Engineering Research Centre on Translational Applications of Nanoscale Multiferroic Systems (TANMS). R.T. also thanks the project “ThunderSKY” funded from the Hellenic Foundation for Research and Innovation (HFRI) and the General Secretariat for Research and Technology (GSRT) under Grant No. 871.
Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/1/10
Y1 - 2019/1/10
N2 - Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.
AB - Nonlinear dynamics has been the key ingredient to improve the performance, in terms of sensitivity, of biased resonant spintronic diodes beyond their semiconductor counterparts. We experimentally demonstrate a nonlinear regime broadband detection for nanoscale spintronic diodes (NSD) where the rectification properties are independent of the input microwave frequency, and compare the device performance with the state of the art Schottky diode for low-power rectification. This regime is achieved in magnetic tunnel junctions with a canted magnetization of the free layer. We further show that the developed NSD provides sufficient dc voltage to supply a low-power nanodevice - a black phosphorus photosensor. Our results could pave the way for using spintronic detectors as building blocks for self-powered nanosystems, such as implantable biomedical devices, wireless sensors, and portable electronics.
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U2 - 10.1103/PhysRevApplied.11.014022
DO - 10.1103/PhysRevApplied.11.014022
M3 - Article
AN - SCOPUS:85059846716
SN - 2331-7019
VL - 11
JO - Physical Review Applied
JF - Physical Review Applied
IS - 1
M1 - 014022
ER -