The perpendicular resistivity in n-type Al0.22Ga0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)