Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices

E. L. Waldron, Y. L. Li, E. F. Schubert, J. W. Graff, Jinn-Kong Sheu

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22 Citations (Scopus)


The perpendicular resistivity in n-type Al0.22Ga0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.

Original languageEnglish
Pages (from-to)4975-4977
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2003 Dec 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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