Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices

E. L. Waldron; Y. L. Li; E. F. Schubert; J. W. Graff; J. K. Sheu

doi:10.1063/1.1631382

Experimental study of perpendicular transport in weakly coupled Al_xGa_1-xN/GaN superlattices

E. L. Waldron, Y. L. Li, E. F. Schubert, J. W. Graff, J. K. Sheu

Department of Photonics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

The perpendicular resistivity in n-type Al_0.22Ga_0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.

Original language	English
Pages (from-to)	4975-4977
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	24
DOIs	https://doi.org/10.1063/1.1631382
Publication status	Published - 2003 Dec 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1631382

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abstract = "The perpendicular resistivity in n-type Al0.22Ga0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.",

author = "Waldron, {E. L.} and Li, {Y. L.} and Schubert, {E. F.} and Graff, {J. W.} and Sheu, {J. K.}",

year = "2003",

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AU - Waldron, E. L.

AU - Li, Y. L.

AU - Schubert, E. F.

AU - Graff, J. W.

AU - Sheu, J. K.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - The perpendicular resistivity in n-type Al0.22Ga0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.

AB - The perpendicular resistivity in n-type Al0.22Ga0.78N/GaN SLs was determined and compared with bulk n-type GaN doped at the same level. The SL has a measured perpendicular resistivity of 1.2 Ω cm. A theoretical model explained that the SL perpendicular transport is fundamentally different than the bulk transport.

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M3 - Article

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JO - Applied Physics Letters

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Experimental study of perpendicular transport in weakly coupled Al_xGa_1-xN/GaN superlattices

Abstract

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