Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si1-xGex system

X. Sun, J. Liu, S. B. Cronin, K. L. Wang, G. Chen, T. Koga, M. S. Dresselhaus

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGex multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.

Original languageEnglish
Pages (from-to)369-374
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume545
Publication statusPublished - 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: 1998 Nov 301998 Dec 3

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si<sub>1-x</sub>Ge<sub>x</sub> system'. Together they form a unique fingerprint.

Cite this