Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si1-xGex system

X. Sun; J. Liu; S. B. Cronin; K. L. Wang; G. Chen; T. Koga; M. S. Dresselhaus

Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si_1-xGe_x system

X. Sun
, J. Liu
, S. B. Cronin
, K. L. Wang
, G. Chen
, T. Koga
, M. S. Dresselhaus

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

In bulk form, Si_1-xGe_x is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si_1-xGe_x multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	545
Publication status	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: 1998 Nov 30 → 1998 Dec 3

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si1-xGex system",

abstract = "In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGex multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.",

author = "X. Sun and J. Liu and Cronin, \{S. B.\} and Wang, \{K. L.\} and G. Chen and T. Koga and Dresselhaus, \{M. S.\}",

year = "1999",

language = "English",

volume = "545",

pages = "369--374",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si1-xGex system

AU - Sun, X.

AU - Liu, J.

AU - Cronin, S. B.

AU - Wang, K. L.

AU - Chen, G.

AU - Koga, T.

AU - Dresselhaus, M. S.

PY - 1999

Y1 - 1999

N2 - In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGex multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.

AB - In bulk form, Si1-xGex is a promising thermoelectric material for high temperature applications. In this paper, we report results from an experimental study as well as theoretical modeling of the quantum confinement effect on the enhancement of the thermoelectric figure of merit. Si/Si1-xGex multiple quantum well structures are fabricated using molecular beam epitaxy (MBE) on SOI (Silicon-on-Insulator) substrates in order to eliminate substrate effects, especially on the Seebeck coefficient. A method to eliminate the influence of the buffer layer on the thermoelectric characterization is presented. An enhancement of the thermoelectric figure of merit within the quantum well over the bulk value is observed.

UR - https://www.scopus.com/pages/publications/0032591207

UR - https://www.scopus.com/pages/publications/0032591207#tab=citedBy

M3 - Conference article

AN - SCOPUS:0032591207

SN - 0272-9172

VL - 545

SP - 369

EP - 374

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Experimental study of the effect of the quantum well structures on the thermoelectric figure of merit in Si/Si_1-xGe_x system

Abstract

All Science Journal Classification (ASJC) codes

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