Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

Chien Hung Chen; Yiming Li; Chieh Yang Chen; Yu Yu Chen; Sheng Chia Hsu; Wen Tsung Huang; Sheng-Yuan Chu

doi:10.1109/NANO.2013.6721026

Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng-Yuan Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔV_fb) and density of interface traps (D _it) have around 50% improvement.

Original language	English
Title of host publication	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages	1168-1171
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2013.6721026
Publication status	Published - 2013 Dec 1
Event	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China Duration: 2013 Aug 5 → 2013 Aug 8

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Print)	1944-9399
ISSN (Electronic)	1944-9380

Other

Other	2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Country/Territory	China
City	Beijing
Period	13-08-05 → 13-08-08

All Science Journal Classification (ASJC) codes

Bioengineering
Electrical and Electronic Engineering
Materials Chemistry
Condensed Matter Physics

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10.1109/NANO.2013.6721026

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Chen, C. H., Li, Y., Chen, C. Y., Chen, Y. Y., Hsu, S. C., Huang, W. T., & Chu, S.-Y. (2013). Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 1168-1171). Article 6721026 (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6721026

@inproceedings{4f9785d943eb46e98b77196928d5e1cf,

title = "Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices",

abstract = "In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔVfb) and density of interface traps (D it) have around 50% improvement.",

author = "Chen, {Chien Hung} and Yiming Li and Chen, {Chieh Yang} and Chen, {Yu Yu} and Hsu, {Sheng Chia} and Huang, {Wen Tsung} and Sheng-Yuan Chu",

year = "2013",

month = dec,

day = "1",

doi = "10.1109/NANO.2013.6721026",

language = "English",

isbn = "9781479906758",

series = "Proceedings of the IEEE Conference on Nanotechnology",

pages = "1168--1171",

booktitle = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013",

note = "2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 ; Conference date: 05-08-2013 Through 08-08-2013",

}

Chen, CH, Li, Y, Chen, CY, Chen, YY, Hsu, SC, Huang, WT & Chu, S-Y 2013, Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6721026, Proceedings of the IEEE Conference on Nanotechnology, pp. 1168-1171, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13-08-05. https://doi.org/10.1109/NANO.2013.6721026

Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices. / Chen, Chien Hung; Li, Yiming; Chen, Chieh Yang et al.
2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 1168-1171 6721026 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

AU - Chen, Chien Hung

AU - Li, Yiming

AU - Chen, Chieh Yang

AU - Chen, Yu Yu

AU - Hsu, Sheng Chia

AU - Huang, Wen Tsung

AU - Chu, Sheng-Yuan

PY - 2013/12/1

Y1 - 2013/12/1

N2 - In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔVfb) and density of interface traps (D it) have around 50% improvement.

AB - In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔVfb) and density of interface traps (D it) have around 50% improvement.

UR - http://www.scopus.com/inward/record.url?scp=84894178919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894178919&partnerID=8YFLogxK

U2 - 10.1109/NANO.2013.6721026

DO - 10.1109/NANO.2013.6721026

M3 - Conference contribution

AN - SCOPUS:84894178919

SN - 9781479906758

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 1168

EP - 1171

BT - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

T2 - 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013

Y2 - 5 August 2013 through 8 August 2013

ER -

Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

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