TY - JOUR
T1 - Exploring the First High-Entropy Thin Film Libraries
T2 - Composition Spread-Controlled Crystalline Structure
AU - Nguyen, Thi Xuyen
AU - Su, Yen Hsun
AU - Hattrick-Simpers, Jason
AU - Joress, Howie
AU - Nagata, Takahiro
AU - Chang, Kao Shuo
AU - Sarker, Suchismita
AU - Mehta, Apurva
AU - Ting, Jyh Ming
N1 - Funding Information:
This work has been supported by the Ministry of Science and Technology in Taiwan under Grant Nos. MOST 107-2218-E-006-047 and MOST 108-2218-E-006-023.
Publisher Copyright:
©
PY - 2020/12/14
Y1 - 2020/12/14
N2 - Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)Ox, all the metals have a stable divalent oxidation state and similar cationic radii. In the second type of oxides, (CrFeMnCoNi)Ox, the metals are more diverse in the atomic radius and valence state, and have good solubility in their sub-binary and ternary oxide systems. The resulting HEO thin films were characterized using several high-throughput analytical techniques. The microstructure, composition, and electrical conductivity obtained on defined grid maps were obtained for the first time across large compositional ranges. The crystalline structure of the films was observed as a function of the metallic elements in the composition spreads, that is, the Mn and Zn in (MgZnMnCoNi)Ox and Mn and Ni in (CrFeMnCoNi)Ox. The (MgZnMnCoNi)Ox sample was observed to form two-phase structures, except single spinel structure was found in (MgZnMnCoNi)Ox over a range of Mn > 12 at. % and Zn < 44 at. %, while (CrFeMnCoNi)Ox was always observed to form two-phase structures. Composition-controlled crystalline structure is not only experimentally demonstrated but also supported by density function theory calculation.
AB - Thin films of two types of high-entropy oxides (HEOs) have been deposited on 76.2 mm Si wafers using combinatorial sputter deposition. In one type of the oxides, (MgZnMnCoNi)Ox, all the metals have a stable divalent oxidation state and similar cationic radii. In the second type of oxides, (CrFeMnCoNi)Ox, the metals are more diverse in the atomic radius and valence state, and have good solubility in their sub-binary and ternary oxide systems. The resulting HEO thin films were characterized using several high-throughput analytical techniques. The microstructure, composition, and electrical conductivity obtained on defined grid maps were obtained for the first time across large compositional ranges. The crystalline structure of the films was observed as a function of the metallic elements in the composition spreads, that is, the Mn and Zn in (MgZnMnCoNi)Ox and Mn and Ni in (CrFeMnCoNi)Ox. The (MgZnMnCoNi)Ox sample was observed to form two-phase structures, except single spinel structure was found in (MgZnMnCoNi)Ox over a range of Mn > 12 at. % and Zn < 44 at. %, while (CrFeMnCoNi)Ox was always observed to form two-phase structures. Composition-controlled crystalline structure is not only experimentally demonstrated but also supported by density function theory calculation.
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U2 - 10.1021/acscombsci.0c00159
DO - 10.1021/acscombsci.0c00159
M3 - Article
C2 - 33146510
AN - SCOPUS:85096895704
SN - 2156-8952
VL - 22
SP - 858
EP - 866
JO - ACS Combinatorial Science
JF - ACS Combinatorial Science
IS - 12
ER -